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Title: | Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing | Authors: | Frigeri, C. Serenyi, M. Khanh, N. Q. Csik, A. Nasi, L. Erdelyi, Z. Beke, D. L. BOYEN, Hans-Gerd |
Issue Date: | 2013 | Publisher: | ELSEVIER SCIENCE BV | Source: | APPLIED SURFACE SCIENCE, 267, p. 30-34 | Abstract: | The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing. (C) 2012 Elsevier B. V. All rights reserved. | Notes: | [Frigeri, C.; Nasi, L.] CNR IMEM Inst, I-43100 Parma, Italy. [Serenyi, M.; Khanh, N. Q.] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary. [Csik, A.] Hungarian Acad Sci, Inst Nucl Res, H-4001 Debrecen, Hungary. [Erdelyi, Z.; Beke, D. L.] Univ Debrecen, Dept Solid State Phys, H-4010 Debrecen, Hungary. [Boyen, H. -G.] Hasselt Univ, Inst Mat Res, Diepenbeek, Belgium. | Keywords: | Amorphous Si/Ge superlattice;Hydrogen;Annealing;Nanostructure;Blistering | Document URI: | http://hdl.handle.net/1942/14778 | ISSN: | 0169-4332 | e-ISSN: | 1873-5584 | DOI: | 10.1016/j.apsusc.2012.05.030 | ISI #: | 000314881900008 | Rights: | 2012 Elsevier B.V. All rights reserved. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2014 |
Appears in Collections: | Research publications |
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