Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/1487
Title: Thin-film polycrystalline-silicon solar cells on high-temperature glass made by aluminium-induced crystallization of amorphous silicon
Authors: Van Gestel, D.
GORDON, Ivan 
Carnel, L.
Pinckney, L.
Mayolet, A.
D'HAEN, Jan 
Beaucarne, Guy
POORTMANS, Jef 
Issue Date: 2006
Publisher: MRS
Source: Amorphous and Polycrystalline Thin Film Silicon Science and Technology. p. A26-04-....
Series/Report: MRS symposium Proceedings
Series/Report no.: 910
Abstract: Efficient polycrystalline-silicon (pc-Si) solar cells on foreign substrates could lower the price of photovoltaic electricity. Alumnium-induced crytallization (AIC) of amorphous silicon followed by epitaxial thickening at high temperature seems a good way to obtain efficient pc-Si solar cells. Due to its transparency and low cost, glass is well suited as substrate for pc-Si cells. However, most glass substrates do not withstand temperatures around 1000°C that are needed for high-temperature epitaxial growth. In this paper we investigate the use of experimental transparent glass-ceramics with high strain-point temperatures as substrates for pc-SI solar cells. AIC needs layers made on these substrates showed in-plane grain sizes up to 16 μm. Columnar growth was observed on these seed layers during high-temperature epitaxy. First pc-Si solar cells made on glass-ceramic substrates in substrate configuration showed efficiencies up to 4.5%, fill factors up to 75% and open-circuit voltage (Voc) values up to 536 mV. This is the highest Voc reported for pc-Si solar cells on glass and the best cell efficiency reported for cells made by AIC on glass.
Keywords: photovoltaic; grain boundaries; chemical vapor deposition (CVD)(deposition)
Document URI: http://hdl.handle.net/1942/1487
ISI #: 000245670700103
Category: C1
Type: Proceedings Paper
Validations: ecoom 2008
Appears in Collections:Research publications

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