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Title: An environment friendly wet strip process for 193 nm lithography patterning in BEOL applications
Authors: Vereecke, G.
Le, Q. T.
CLAES, Monica 
Lux, M.
Struyf, H.
CARLEER, Robert 
Issue Date: 2013
Abstract: In semiconductor Back-End-of-Line (BEOL) processing, wet organic strippers have gained a renewed interest for removal of etched photoresist (PR) layers to replace plasma strip, which degrades porous low-k dielectrics. In this study we show how the characterization of 193-nm PR degradation by etch plasmas led to the development of an environment friendly wet strip using aqueous ozone solutions. Characterization of post-etch PR films have shown that degradation was similar to that of poly(methyl acrylate/methacrylate) (PMA/PMMA) by UV light, with formation of single and conjugated C=C bonds in PR chains. However little removal was obtained with O-3/H2O strips without an organic solvent rinse, indicating reactions fragments were too long for a complete dissolution in water. In turn known effects of UV on PMA/PMMA were used to develop an optimized UV pre-treatment enabling a fully aqueous O-3 strip. This process was shown to efficiently remove PR in a dual damascene application. Also we shortly discuss the impact of materials selection on process efficiency, improvement in low-k compatibility and transfer to a production environment. (C) 2012 Elsevier B.V. All rights reserved.
Notes: [Vereecke, G.; Kesters, E.; Le, Q. T.; Claes, M.; Lux, M.; Struyf, H.] IMEC, B-3001 Louvain, Belgium. [Carleer, R.; Adriaensens, P.] U Hasselt, IMO Div Chem, B-3590 Diepenbeek, Belgium.
Keywords: Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied;Photoresist; Wet strip; UV; Ozone; ES&H
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ISSN: 0167-9317
e-ISSN: 1873-5568
DOI: 10.1016/j.mee.2012.10.018
ISI #: 000316529600023
Category: A1
Type: Journal Contribution
Validations: ecoom 2014
Appears in Collections:Research publications

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