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Title: Liquid-Phase Adsorption of Sulfur on Germanium: Reaction Mechanism and Atomic Geometry
Authors: Fleischmann, Claudia
Houssa, Michel
Mueller, Matthias
Beckhoff, Burkhard
BOYEN, Hans-Gerd 
Meuris, Marc
Temst, Kristiaan
Vantomme, Andre
Issue Date: 2013
Source: JOURNAL OF PHYSICAL CHEMISTRY C, 117 (15), p. 7451-7458
Abstract: We present a fundamental study of the monolayer adsorption of sulfur on Ge(100) surfaces from aqueous (NH4)(2)S solution. This treatment shows promising perspectives for the passivation of high-mobility semiconductor surfaces and is therefore presently of great technological importance. The adsorption mechanisms as well as the adsorption geometry are thoroughly investigated at the atomic scale, by both experiment and theory, applying X-ray absorption spectroscopy and molecular dynamics simulations. Our findings indicate that sulfidation in solution results in the formation of Ge-S-Ge bridges along the [110] direction, with no indication for -SH surface groups. A-S-Ge bond length of 2.25 +/- 0.05 angstrom was deduced, which is affected by the chemical environment of the sulfur atoms, i.e., by residual surface oxides. Our study provides novel insights into the surface termination and atomic structure of (NH4)(2)S-treated Ge(100) surfaces and discusses possible differences from in situ sulfur adsorption methods such as H2S or S-2 exposure.
Notes: Katholieke Univ Leuven, Inst Kern & Stralingsfys, BE-3001 Louvain, Belgium. Katholieke Univ Leuven, Semicond Phys Lab, BE-3001 Louvain, Belgium. Phys Tech Bundesanstalt, D-10587 Berlin, Germany. Hasselt Univ, Inst Mat Res, BE-3590 Diepenbeek, Belgium. IMEC, BE-3001 Louvain, Belgium.
Keywords: Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
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ISSN: 1932-7447
e-ISSN: 1932-7455
DOI: 10.1021/jp306536n
ISI #: 000317950300006
Category: A1
Type: Journal Contribution
Validations: ecoom 2014
Appears in Collections:Research publications

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