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http://hdl.handle.net/1942/15422
Title: | Preparation of epitaxial films of the transparent conductive oxide Al:ZnO by reactive high-pressure sputtering in Ar/O2 mixtures | Authors: | VAN GOMPEL, Matthias CONINGS, Bert JIMENEZ MONROY, Kathia D'HAEN, Jan GILISSEN, Koen D'OLIESLAEGER, Marc VAN BAEL, Marlies WAGNER, Patrick |
Issue Date: | 2013 | Publisher: | WILEY-V C H VERLAG GMBH | Source: | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 210 (5), p. 1013-1018 | Abstract: | Transparent conductive metal oxides are interesting materials for various optoelectronic applications including solar cells and flat panel displays. This study focuses on the in situ deposition of aluminum-doped zinc oxide (AZO) thin layers on c-axis oriented sapphire substrates by dc sputtering and on the structural and electrical characterization. The films have a typical thickness of 90nm and a roughness of 10nm root mean square. An Al/Zn ratio of 2.4at% Al was determined by X-ray photoelectron spectroscopy. X-ray diffraction shows a preferential growth in the (0002) c-axis direction. Films have an average transparency of 90% in the visible-light spectrum, a room-temperature resistivity of 3.7x103cm and a carrier mobility of 6.7 cm(2) V-1 s(-1). | Notes: | Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. IMEC VZW, Div IMOMEC, B-3590 Diepenbeek, Belgium. Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. | Keywords: | DC sputtering; electrical transport properties; transparent conductive oxides; X-ray diffraction;Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | Document URI: | http://hdl.handle.net/1942/15422 | ISSN: | 1862-6300 | e-ISSN: | 1862-6319 | DOI: | 10.1002/pssa.201200986 | ISI #: | 000319151900030 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2014 |
Appears in Collections: | Research publications |
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