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Title: | Influence of hydrogen and hydrogen/methane plasmas on AlN thin films | Authors: | POBEDINSKAS, Paulius DEGUTIS, Giedrius DEXTERS, Wim HARDY, An VAN BAEL, Marlies HAENEN, Ken |
Issue Date: | 2014 | Publisher: | AIP Publishing | Source: | APPLIED PHYSICS LETTERS, 104 (8), (ART N° 081917) | Abstract: | Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E1(TO) and E22 phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E1(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E22 peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them. | Keywords: | AlN films; III-V semiconductors; diamond; phonons; plasma materials processing; thin film growth | Document URI: | http://hdl.handle.net/1942/16702 | ISSN: | 0003-6951 | e-ISSN: | 1077-3118 | DOI: | 10.1063/1.4867022 | ISI #: | 000332619100052 | Rights: | Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. 2014 AIP Publishing LLC | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2015 |
Appears in Collections: | Research publications |
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P.Pobedinskas, APL 104, 081917 (2014).pdf Restricted Access | Published version | 967.54 kB | Adobe PDF | View/Open Request a copy |
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