Silicone oxidation for a-Si:H passivation of wafers bonded to glass

Abstract

A possible scenario for wafer-based silicon photovoltaics is the processing of solar modules starting from thin silicon wafers bonded to glass. However, interactions between the adhesive used for bonding and the solar cell processing can affect the surface passivation of the bonded wafer and decrease cell performances. A method that suppresses these interactions and leads to state-of-the-art a-Si:H surface passivation is presented in this Letter. The method is based on an increase of the surface cross-linking of a silicone adhesive by means of an O-2 plasma and it is successfully tested on three different silicones. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)