Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18717
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dc.contributor.authorMeddeb, H.-
dc.contributor.authorBearda, Twan-
dc.contributor.authorDimassi, Wissem-
dc.contributor.authorAbdulraheem, Yaser-
dc.contributor.authorEzzaouia, Hatem-
dc.contributor.authorGORDON, Ivan-
dc.contributor.authorSzlufcik, Jozef-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2015-04-14T11:54:17Z-
dc.date.available2015-04-14T11:54:17Z-
dc.date.issued2015-
dc.identifier.citationPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 9 (1), p. 53-56-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/1942/18717-
dc.description.abstractA parametric study of post-deposition hydrogen plasma treatment of intrinsic a:Si:H films is performed. We demonstrate a significant improvement in passivation of c-Si(100) promoting epitaxy after an in-situ hydrogen plasma treatment depending mainly on the pressure and slightly on the power. Plasma diagnostic indicates an increase of H* signal with high power and low pressure. However, our analysis reveals a better hydrogen incorporation with high pressure and a slight increase in monohydride with high power. Longer H-2 plasma duration up to 50 s shows no detrimental effect on the passivation quality. Optimizing the in-situ H-2 plasma treatment, high minority carrier lifetime over 15 ms was achieved after short thermal annealing. ((c) 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.rights© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.subject.othersurface passivation; amorphous materials; silicon; hydrogen; plasma treatment; PECVD-
dc.subject.othersurface passivation; amorphous materials; silicon; hydrogen; plasma treatment; PECVD-
dc.titleUltra high amorphous silicon passivation quality of crystalline silicon surface using in-situ post-deposition treatments-
dc.typeJournal Contribution-
dc.identifier.epage56-
dc.identifier.issue1-
dc.identifier.spage53-
dc.identifier.volume9-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notes[Meddeb, H.] Ctr Excellence Nanomfg Applicat CENA, KACST Intel Consortium, Riyadh, Saudi Arabia. [Meddeb, H.; Bearda, Twan; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef] IMEC, B-3001 Heverlee, Belgium. [Meddeb, H.; Dimassi, Wissem; Ezzaouia, Hatem] Res & Technol Ctr Energy, Photovolta Dept, Hammam Lif 2050, Tunisia. [Meddeb, H.] Univ Carthage, Fac Sci Bizerta, Carthage, Tunisia. [Abdulraheem, Yaser] Kuwait Univ, Dept Elect Engn, Coll Engn & Petr, Safat 13060, Kuwait. [Poortmans, Jef] Univ Hasselt, Fac Sci, B-3500 Hasselt, Belgium. hosny.meddeb@gmail.com-
local.publisher.placeWEINHEIM-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1002/pssr.201409494-
dc.identifier.isi000348763500008-
item.validationecoom 2016-
item.contributorMeddeb, H.-
item.contributorBearda, Twan-
item.contributorDimassi, Wissem-
item.contributorAbdulraheem, Yaser-
item.contributorEzzaouia, Hatem-
item.contributorGORDON, Ivan-
item.contributorSzlufcik, Jozef-
item.contributorPOORTMANS, Jef-
item.fullcitationMeddeb, H.; Bearda, Twan; Dimassi, Wissem; Abdulraheem, Yaser; Ezzaouia, Hatem; GORDON, Ivan; Szlufcik, Jozef & POORTMANS, Jef (2015) Ultra high amorphous silicon passivation quality of crystalline silicon surface using in-situ post-deposition treatments. In: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 9 (1), p. 53-56.-
item.fulltextWith Fulltext-
item.accessRightsRestricted Access-
crisitem.journal.issn1862-6254-
crisitem.journal.eissn1862-6270-
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