Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/18816
Title: Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates
Authors: MORTET, Vincent 
Pernot, J.
Jomard, F.
Soltani, A.
REMES, Zdenek 
Barjon, Julien
D'HAEN, J. 
HAENEN, Ken 
Issue Date: 2015
Publisher: ELSEVIER SCIENCE SA
Source: DIAMOND AND RELATED MATERIALS (53), p. 29-34
Abstract: Boron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed by scanning electron microscopy consists of (100) and (113) micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation of boron determined by electrical measurements. A maximum mobility of 528 cm(2) V-1 s(-1) was measured at room temperature for a charge carrier concentration of 1.1 10(13) cm(-3). Finally, properties of boron doped (110) diamond layers are compared with layers on (100) and (111) orientated substrates. (c) 2015 Elsevier B.V. All rights reserved.
Notes: Corresponding author at: Institute of Physics, Academy of Sciences Czech Republic v.v.i, Na Slovance 2, 182 21 Prague 8, Czech Republic.
Keywords: Diamond; Boron; Doping; Crystalline orientation;diamond; boron; doping; crystalline orientation
Document URI: http://hdl.handle.net/1942/18816
ISSN: 0925-9635
e-ISSN: 1879-0062
DOI: 10.1016/j.diamond.2015.01.006
ISI #: 000352046700005
Rights: © 2015 Elsevier B.V. All rights reserved.
Category: A1
Type: Journal Contribution
Validations: ecoom 2016
Appears in Collections:Research publications

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