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http://hdl.handle.net/1942/18848
Title: | Influence of substrate potential on a-Si: H passivation of Si foils bonded to glass | Authors: | Granata, S. N. Bearda, Twan Xu, M. L. Abdulraheem, Yaser GORDON, Ivan Mertens, Robert POORTMANS, Jef |
Issue Date: | 2015 | Publisher: | ELSEVIER SCIENCE SA | Source: | THIN SOLID FILMS, 579, p. 9-13 | Abstract: | In the future solar devices will be manufactured onto thin mono-crystalline silicon wafers (foils) potentially bonded to substrate carriers. In this study, the influence of the substrate carrier potential (grounded or floating) on the amorphous silicon a-Si: H surface passivation of the bonded foil is discussed for the cases of conductive and insulating substrate carriers. A conductive carrier leads to an increase in deposition rate and ion bombardment energy, which is detrimental for sample lifetime. An insulating carrier, e.g., a glass substrate, inverts the trend and improves the a-Si: H surface passivation. (C) 2015 Elsevier B.V. All rights reserved. | Notes: | [Granata, S. N.; Xu, M. L.; Mertens, R.; Poortmans, J.] Katholieke Univ Leuven, ESAT, B-3000 Louvain, Belgium. [Granata, S. N.; Bearda, T.; Xu, M. L.; Gordon, I.; Mertens, R.; Poortmans, J.] IMEC, B-3001 Heverlee, Belgium. [Xu, M. L.] Tech Univ Dresden, D-01069 Dresden, Germany. [Abdulraheem, Y.] Kuwait Univ, Safat 13060, Kuwait. [Poortmans, J.] Hasselt Univ, B-3500 Hasselt, Belgium. | Keywords: | surface passivation; amorphous silicon; plasma potential; PECVD; heterojunctions; silicon solar cells; thin wafers;Surface passivation; Amorphous silicon; Plasma potential; PECVD; Heterojunctions; Silicon solar cells; Thin wafers | Document URI: | http://hdl.handle.net/1942/18848 | ISSN: | 0040-6090 | e-ISSN: | 1879-2731 | DOI: | 10.1016/j.tsf.2015.02.044 | ISI #: | 000352219700002 | Rights: | © 2015 Elsevier B.V. All rights reserved. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2016 |
Appears in Collections: | Research publications |
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