Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2148
Title: Gap-state spectroscopy in amorphous selenium
Authors: Benkhedir, M.L.
Brinza, M
Willekens, J
HAENEN, Ken 
DAENEN, Michael 
NESLADEK, Milos 
Adriaenssens, G.J.
Issue Date: 2005
Publisher: NATL INST OPTOELECTRONICS
Source: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(5). p. 2223-2230
Abstract: possible to locate several of the energy levels of the charged coordination defects (D+ and D-) that constitute the chalcogenide negative-U model in the amorphous selenium bandgap. However it has also been observed that the energy position of those levels is influenced by external influences such as light soaking or annealing of the samples. The post-transit time-of-flight photocurrents that reveal those energy positions have, therefore, been systematically studied in samples with different pre-histories. The optical absorption in the samples was further examined through the constant-photocurrent method (CPM), and by photothermal deflection spectroscopy (PDS). Although the TOF results provide information on the D+ and D- levels separately, while the CPM and PDS data reflect the integral optical absorption between both centres and the bands, the results do agree. The photo-induced changes that are observed are stable at room temperature.
Notes: Katholieke Univ Leuven, B-3001 Louvain, Belgium. Limburgs Univ Ctr, Inst Mat Res, B-3590 Diepenbeek, Belgium.Benkhedir, ML, Katholieke Univ Leuven, Celestijnenlaan 200D, B-3001 Louvain, Belgium.mohammedloufti.benkhedir@fys.kuleuven.ac.be
Keywords: amorphous selenium; gap states; photoconductivity; photothermal deflection spectroscopy
Document URI: http://hdl.handle.net/1942/2148
Link to publication: http://inoe.inoe.ro/JOAM/pdf7_5/Benkhedir.pdf
ISSN: 1454-4164
e-ISSN: 1841-7132
ISI #: 000232894100001
Category: A1
Type: Journal Contribution
Validations: ecoom 2006
Appears in Collections:Research publications

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