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http://hdl.handle.net/1942/22038
Title: | Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond | Authors: | BALASUBRAMANIAM, Yaso POBEDINSKAS, Paulius JANSSENS, Stoffel Sakr, G. Jomard, F. TURNER, Stuart Lu, Y.-G. DEXTERS, Wim Soltani, A. Verbeeck, J. Barjon, J. NESLADEK, Milos HAENEN, Ken |
Issue Date: | 2016 | Source: | Applied physics letters, 109(6) (Art N° 062105) | Abstract: | The fabrication of n-type diamond is essential for the realization of electronic components for extreme environments. We report on the growth of a 66 μm thick homoepitaxial phosphorus-doped diamond on a (110)-oriented diamond substrate, grown at a very high deposition rate of 33 μm/h. A pristine diamond lattice is observed by high resolution transmission electron microscopy, which indicates the growth of high quality diamond. About 2.9 × 10^16 cm−3 phosphorus atoms are electrically active as substitutional donors, which is 60% of all incorporated dopant atoms. These results indicate that P-doped (110)-oriented diamond films deposited at high growth rates are promising candidates for future use in high-power electronic applications. | Keywords: | diamond; P-doping; CVD | Document URI: | http://hdl.handle.net/1942/22038 | ISSN: | 0003-6951 | e-ISSN: | 1077-3118 | DOI: | 10.1063/1.4960970 | ISI #: | 000383183600025 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2017 |
Appears in Collections: | Research publications |
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Y.Balasubramaniam, APL 109, 062105 (2016).pdf Restricted Access | Published version | 713.26 kB | Adobe PDF | View/Open Request a copy |
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