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Title: | Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates | Authors: | KAMATCHI JOTHIRAMALINGAM, Sankaran Manoharan, D. Sundaravel, B. Lin, I. N. |
Issue Date: | 2016 | Publisher: | AMER INST PHYSICS | Source: | APPLIED PHYSICS LETTERS, 109(10), p. 41-45 (Art N° 101603) | Abstract: | Multienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Omega cm)(-1) and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/mu m, high current density of 5.4 mA/cm(2) (@ 2.65 V/mu m), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films. Published by AIP Publishing. | Notes: | [Sankaran, K. J.] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium. [Sankaran, K. J.] IMOMEC, IMEC VZW, B-3590 Diepenbeek, Belgium. [Manoharan, D.; Lin, I. N.] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan. [Sundaravel, B.] Mat Sci Grp, Indira Gandhi Ctr Atom Res, Kalpakkam 603102, Tamil Nadu, India. | Document URI: | http://hdl.handle.net/1942/22694 | ISSN: | 0003-6951 | e-ISSN: | 1077-3118 | DOI: | 10.1063/1.4962537 | ISI #: | 000384402900007 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2017 |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
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5. APL, Multi Au.3-7.pdf | Published version | 1.42 MB | Adobe PDF | View/Open |
Multi energy Au.pdf | Peer-reviewed author version | 920.47 kB | Adobe PDF | View/Open |
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