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http://hdl.handle.net/1942/2309
Title: | Novel in-plane gate devices on hydrogenated diamond surfaces | Authors: | Garrido, JA Nebel, CE Todt, R Amann, M.C. WILLIAMS, Oliver Jackman, R NESLADEK, Milos Stutzmann, M |
Issue Date: | 2003 | Publisher: | WILEY-V C H VERLAG GMBH | Source: | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 199(1). p. 56-63 | Abstract: | Hydrogen-terminated diamond surfaces are very attractive for devices based on surface electronics. The hole channel that governs the surface conductivity and the simplicity of the surface patterning are key features which allow a large flexibility for device design. In-plane gate field effect transistors have been fabricated with the conductive channel separated from the ohmic gate contacts by insulating thin lines, obtained by using a combination of electron beam lithography with surface oxidation. Depletion regions spreading from the highly resistive oxidized lines which separate the channel and gate regions can be controlled by applying a voltage to both lateral gate contacts. A wire structure has been designed in such a way that the gate voltage effectively modulates the conductance of the channel. The channel modulation is discussed in terms of a quasi two-dimensional surface carrier density. The effect of surface defects on the transistor properties has also been investigated. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | Notes: | Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany. Univ Coll London, London WC1 E7JE, England. Limburgs Univ Centrum, Mat Res Inst, B-3590 Diepenbeek, Belgium.Garrido, JA, Tech Univ Munich, Walter Schottky Inst, Coulombwall, D-85748 Garching, Germany. | Document URI: | http://hdl.handle.net/1942/2309 | ISSN: | 0031-8965 | e-ISSN: | 1862-6319 | DOI: | 10.1002/pssa.200303823 | ISI #: | 000185422000012 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2004 |
Appears in Collections: | Research publications |
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