Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/24410
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dc.contributor.authorRanjbar, Samaneh-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorVERMANG, Bart-
dc.contributor.authorHadipour, Afshin-
dc.contributor.authorSylvester, M.-
dc.contributor.authorMule, Aniket-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorda Cunha, A. F.-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2017-09-07T12:10:20Z-
dc.date.available2017-09-07T12:10:20Z-
dc.date.issued2017-
dc.identifier.citationTHIN SOLID FILMS, 633(SI), p. 127-130-
dc.identifier.issn0040-6090-
dc.identifier.urihttp://hdl.handle.net/1942/24410-
dc.description.abstractWe have fabricated Cu2ZnSnSe4 (CZTSe) solar cells with different absorber layer thickness. Absorber layers with different thicknesses were fabricated by changing the thickness of e-beam evaporated Sn/Zn/Cu precursor stacks and then selenization in a rapid thermal processing system. Scanning electron microscopy revealed that by increasing the thickness the morphology of CZTSe films improves substantially and energy dispersive spectrometry measurements showed that the Cu to Sn ratio increased with increasing the film thickness, despite a similar Cu to Sn ratio in the starting layers. A longer minority carrier lifetime and higher open circuit voltage were achieved for solar cells with thicker absorber layers. A maximum conversion efficiency of 7.8% (without anti reflection coating) was achieved for a solar cell with 1.7 mu m thickness in which a low doping density of the order of 10(15) cm(-3) was measured, leading to a wide space charge region of about 300 nm. (C) 2016 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 640868. This research is partially funded by the Flemish government, Department Economy, Science and innovation. This work is also funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT - Portuguese Foundation for Science and Technology under the project UID/CTM/50025/2013. Samaneh Ranjbar acknowledges the financial support of the Portuguese Science and Technology Foundation (FCT) through PhD grant SFRH/BD/78409/2011. B. Vermang acknowledges the financial support of the Flemish Research Foundation FWO (mandate 1204215N).-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE SA-
dc.rights© 2016 Elsevier B.V. All rights reserved-
dc.subject.otherkesterite; solar cells; copper zinc tin selenide; tin/Zinc/Copper precursor; precursor thickness; absorber layer; thickness-
dc.subject.otherKesterite; Solar cells; Copper zinc tin selenide; Tin/Zinc/Copper precursor; Precursor thickness; Absorber layer; Thickness-
dc.titleEffect of Sn/Zn/Cu precursor stack thickness on two-step processed kesterite solar cells-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateMAY 02-06, 2016-
local.bibliographicCitation.conferencenameSymposium V on Thin Film Chalcogenide Photovoltaic Materials held at the 13th E-MRS Spring Meeting-
local.bibliographicCitation.conferenceplaceLille, FRANCE-
dc.identifier.epage130-
dc.identifier.issueSI-
dc.identifier.spage127-
dc.identifier.volume633-
local.format.pages4-
local.bibliographicCitation.jcatA1-
dc.description.notes[Ranjbar, Samaneh; da Cunha, A. F.] Univ Aveiro, Dept Fis I3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal. [Brammertz, Guy; Sylvester, M.; Meuris, Marc] IMEC, Div IMOMEC, Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Brammertz, Guy; Meuris, Marc; Poortmans, Jef] Hasselt Univ, Inst Mat Res IMO, Wetenschapspk 1, B-3590 Diepenbeek, Belgium. [Ranjbar, Samaneh; Vermang, Bart; Hadipour, Afshin; Sylvester, M.; Mule, Aniket; Poortmans, Jef] IMEC, Partner Solliance, Kapeldreef 75, B-3001 Leuven, Belgium. [Ranjbar, Samaneh; Vermang, Bart; Sylvester, M.; Mule, Aniket; Poortmans, Jef] Katholieke Univ Leuven, Dept Elect Engn ESAT, Kasteelpk Arenberg 10, B-3001 Heverlee, Belgium. [Mule, Aniket] ETH, LEEK, Dept Mech & Proc Engn D MAVT, Leonhardstr 21, CH-8092 Zurich, Switzerland.-
local.publisher.placeLAUSANNE-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.type.programmeH2020-
local.relation.h2020640868-
dc.identifier.doi10.1016/j.tsf.2016.09.040-
dc.identifier.isi000404802300025-
item.validationecoom 2018-
item.contributorRanjbar, Samaneh-
item.contributorBRAMMERTZ, Guy-
item.contributorVERMANG, Bart-
item.contributorHadipour, Afshin-
item.contributorSylvester, M.-
item.contributorMule, Aniket-
item.contributorMEURIS, Marc-
item.contributorda Cunha, A. F.-
item.contributorPOORTMANS, Jef-
item.fullcitationRanjbar, Samaneh; BRAMMERTZ, Guy; VERMANG, Bart; Hadipour, Afshin; Sylvester, M.; Mule, Aniket; MEURIS, Marc; da Cunha, A. F. & POORTMANS, Jef (2017) Effect of Sn/Zn/Cu precursor stack thickness on two-step processed kesterite solar cells. In: THIN SOLID FILMS, 633(SI), p. 127-130.-
item.fulltextWith Fulltext-
item.accessRightsOpen Access-
crisitem.journal.issn0040-6090-
crisitem.journal.eissn1879-2731-
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