Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2524
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dc.contributor.authorPETERSEN, Rainer-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorD'HAEN, Jan-
dc.contributor.authorD'OLIESLAEGER, Marc-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorVendier, O-
dc.contributor.authorBlanck, H-
dc.date.accessioned2007-11-15T09:22:03Z-
dc.date.available2007-11-15T09:22:03Z-
dc.date.issued2002-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 42(9-11). p. 1359-1363-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/2524-
dc.description.abstractWith the introduction of HBTs based on InGaP the device reliability could be dramatically improved. Life tests at junction temperatures of 225degreesC showed no significant device degradation after 1000 hours of test time. In order to obtain significant device degradation within reasonable test times, the applied stress must be increased in a responsible manner in order not to introduce artificial ageing effects. In this paper, life test results on In-GaP HBTs are presented and discussed for junction temperatures attaining 340degreesC. (C) 2002 Elsevier Science Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleExploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology-
dc.typeJournal Contribution-
dc.identifier.epage1363-
dc.identifier.issue9-11-
dc.identifier.spage1359-
dc.identifier.volume42-
local.format.pages5-
local.bibliographicCitation.jcatA1-
dc.description.notesIMOMEC, B-3590 Diepenbeek, Belgium. Alcatel Space, Adv Packaging, F-31037 Toulouse, France. United Monolith Semicond, D-89081 Ulm, Germany.Petersen, R, IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(02)00149-X-
dc.identifier.isi000178889900020-
item.fulltextNo Fulltext-
item.accessRightsClosed Access-
item.contributorDE CEUNINCK, Ward-
item.contributorPETERSEN, Rainer-
item.contributorDE SCHEPPER, Luc-
item.contributorD'OLIESLAEGER, Marc-
item.contributorVendier, O-
item.contributorBlanck, H-
item.contributorD'HAEN, Jan-
item.fullcitationPETERSEN, Rainer; DE CEUNINCK, Ward; D'HAEN, Jan; D'OLIESLAEGER, Marc; DE SCHEPPER, Luc; Vendier, O & Blanck, H (2002) Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology. In: MICROELECTRONICS RELIABILITY, 42(9-11). p. 1359-1363.-
item.validationecoom 2003-
crisitem.journal.issn0026-2714-
crisitem.journal.eissn1872-941X-
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