Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2524

Title:	Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology
Authors:	PETERSEN, Rainer DE CEUNINCK, Ward D'HAEN, Jan D'OLIESLAEGER, Marc DE SCHEPPER, Luc Vendier, O Blanck, H
Issue Date:	2002
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
Source:	MICROELECTRONICS RELIABILITY, 42(9-11). p. 1359-1363
Abstract:	With the introduction of HBTs based on InGaP the device reliability could be dramatically improved. Life tests at junction temperatures of 225degreesC showed no significant device degradation after 1000 hours of test time. In order to obtain significant device degradation within reasonable test times, the applied stress must be increased in a responsible manner in order not to introduce artificial ageing effects. In this paper, life test results on In-GaP HBTs are presented and discussed for junction temperatures attaining 340degreesC. (C) 2002 Elsevier Science Ltd. All rights reserved.
Notes:	IMOMEC, B-3590 Diepenbeek, Belgium. Alcatel Space, Adv Packaging, F-31037 Toulouse, France. United Monolith Semicond, D-89081 Ulm, Germany.Petersen, R, IMOMEC, Wetenschapspk 1, B-3590 Diepenbeek, Belgium.
Document URI:	http://hdl.handle.net/1942/2524
ISSN:	0026-2714
e-ISSN:	1872-941X
DOI:	10.1016/S0026-2714(02)00149-X
ISI #:	000178889900020
Category:	A1
Type:	Journal Contribution
Validations:	ecoom 2003
Appears in Collections:	Research publications

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