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http://hdl.handle.net/1942/2737
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DC Field | Value | Language |
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dc.contributor.author | DREESEN, Raf | - |
dc.contributor.author | CROES, Kristof | - |
dc.contributor.author | MANCA, Jean | - |
dc.contributor.author | DE CEUNINCK, Ward | - |
dc.contributor.author | DE SCHEPPER, Luc | - |
dc.contributor.author | Pergoot, A | - |
dc.contributor.author | Groeseneken, G | - |
dc.date.accessioned | 2007-11-15T21:57:11Z | - |
dc.date.available | 2007-11-15T21:57:11Z | - |
dc.date.issued | 2001 | - |
dc.identifier.citation | MICROELECTRONICS RELIABILITY, 41(3). p. 437-443 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | http://hdl.handle.net/1942/2737 | - |
dc.description.abstract | The hot-carrier degradation of lightly doped drain nMOSFETs is studied in detail. The degradation proceeds in a two-stage mechanism, involving first a series resistance increase and saturation, followed by a carrier mobility reduction. The degradation behaviour of a characteristic MOSFET parameter is modelled over the complete degradation range, from 0.02 up to more than 10%. Furthermore, the introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour, at normal operating conditions. (C) 2001 Elsevier Science Ltd. All rights reserved. | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 443 | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 437 | - |
dc.identifier.volume | 41 | - |
local.format.pages | 7 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1016/S0026-2714(00)00225-0 | - |
dc.identifier.isi | 000167966500012 | - |
item.fullcitation | DREESEN, Raf; CROES, Kristof; MANCA, Jean; DE CEUNINCK, Ward; DE SCHEPPER, Luc; Pergoot, A & Groeseneken, G (2001) A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. In: MICROELECTRONICS RELIABILITY, 41(3). p. 437-443. | - |
item.contributor | DREESEN, Raf | - |
item.contributor | CROES, Kristof | - |
item.contributor | MANCA, Jean | - |
item.contributor | DE CEUNINCK, Ward | - |
item.contributor | DE SCHEPPER, Luc | - |
item.contributor | Pergoot, A | - |
item.contributor | Groeseneken, G | - |
item.validation | ecoom 2002 | - |
item.accessRights | Closed Access | - |
item.fulltext | No Fulltext | - |
crisitem.journal.issn | 0026-2714 | - |
crisitem.journal.eissn | 1872-941X | - |
Appears in Collections: | Research publications |
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