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http://hdl.handle.net/1942/2737
Title: | A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation | Authors: | DREESEN, Raf CROES, Kristof MANCA, Jean DE CEUNINCK, Ward DE SCHEPPER, Luc Pergoot, A Groeseneken, G |
Issue Date: | 2001 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | MICROELECTRONICS RELIABILITY, 41(3). p. 437-443 | Abstract: | The hot-carrier degradation of lightly doped drain nMOSFETs is studied in detail. The degradation proceeds in a two-stage mechanism, involving first a series resistance increase and saturation, followed by a carrier mobility reduction. The degradation behaviour of a characteristic MOSFET parameter is modelled over the complete degradation range, from 0.02 up to more than 10%. Furthermore, the introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour, at normal operating conditions. (C) 2001 Elsevier Science Ltd. All rights reserved. | Notes: | Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | Document URI: | http://hdl.handle.net/1942/2737 | ISSN: | 0026-2714 | e-ISSN: | 1872-941X | DOI: | 10.1016/S0026-2714(00)00225-0 | ISI #: | 000167966500012 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2002 |
Appears in Collections: | Research publications |
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