Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/28748
Title: | Modified Modulation Signals for GaN-E-HEMTs based HERIC Inverter to Improve Reverse Conduction Performance | Authors: | Ahmad, Bilal Kyyra, Jorma MARTINEZ, Wilmar |
Issue Date: | 2018 | Publisher: | IEEE | Source: | 2018 20TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'18 ECCE EUROPE), IEEE, | Series/Report: | European Conference on Power Electronics and Applications | Abstract: | This paper presents an application of modified PWM signals to enhance the efficiency of GaN HEMTs based HERIC inverter. Although application of GaN switches might increases the power density and overall efficiency of inverters due to the structure of GaN HEMTs, reverse conduction losses are increased during the second and fourth quadrant operation of the inverter. Hence, control of the inverter requires modifications to tackle additional losses introduced by GaN switches. Conventional PWM signals were designed to suppress the leakage current by keeping the voltage level constant at the switching nodes in all operating modes. However, modified PWM signals not only suppress the leakage current but also reduce the reverse conduction losses in GaN HEMTs. In this paper, proposed theory is validated by simulations based on spice models provided by the manufacturer of switches on LTspice. Simulation results validated the proposed solution and reported almost 50% reduction in reverse conduction losses. Practical prototype based on GaN HEMTs was also designed and tested. This study aids understanding the effect of the reverse losses on the device behavior and overall efficiency of the inverter. | Notes: | [Ahmad, Bilal; Kyyra, Jorma] Aalto Univ, Dept Elect & Automat Engn, Espoo, Finland. [Martinez, Wilmar] Katholieke Univ Leuven, Elect Engn ESAT Dept, Diepenbeek, Belgium. | Keywords: | Emerging Topology ; Gallium Nitride (GaN); Photovoltaic; Wide Band Gap Devices; Reactive Power;Emerging Topology; Gallium Nitride (GaN); Photovoltaic; Wide Band Gap Devices; Reactive Power | Document URI: | http://hdl.handle.net/1942/28748 | ISBN: | 9789075815283 | ISI #: | 000450299300133 | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
Show full item record
WEB OF SCIENCETM
Citations
1
checked on Sep 26, 2024
Page view(s)
26
checked on Aug 25, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.