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Title: | Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si: H Deposition | Authors: | Xu, Menglei Wang, Chong Bearda, Twan Simoen, Eddy Radhakrishnan, Hariharsudan Sivaramakrishnan Gordon, Ivan Li, Wei Szlufcik, Jozef POORTMANS, Jef |
Issue Date: | 2018 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Source: | IEEE Journal of Photovoltaics, 8(6), p. 1539-1545 | Abstract: | A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H-2) plasma treatment followed by in situ intrinsic hydrogenated amorphous silicon (a-Si:H) deposition has been investigated. The impact of H-2 gas flow rate and H-2 plasma processing time on the a-Si:H/c-Si interface passivation quality is studied. Optimal H-2 plasma processing conditions result in the best effective minority carrier lifetime of up to 2.5 ms at an injection level of 1 x 10(15) cm(-3), equivalent to the best effective surface recombination velocity of 4 cm/s. The reasons that enable such superior passivation quality are discussed in this paper based on the characterization of the a-Si:H/c-Si interface and c-Si substrate using transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, and deep-level transient spectroscopy. | Notes: | [Xu, Menglei; Poortmans, Jef] Katholieke Univ Leuven, B-3001 Leuven, Belgium. [Xu, Menglei; Bearda, Twan; Simoen, Eddy; Radhakrishnan, Hariharsudan Sivaramakrishnan; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef] IMEC, B-3001 Leuven, Belgium. [Wang, Chong; Li, Wei] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China. [Bearda, Twan] ENTRAS, B-2800 Mechelen, Belgium. [Simoen, Eddy] Univ Ghent, B-9000 Ghent, Belgium. [Poortmans, Jef] Hasselt Univ, B-3500 Hasselt, Belgium. | Keywords: | hydrogenated amorphous silicon (a-Si:H); hydrogen (H2 ) plasma; passivation; silicon heterojunction (SHJ) solar cells;Hydrogenated amorphous silicon (a-Si:H); hydrogen (H-2) plasma; passivation; silicon heterojunction (SHJ) solar cells | Document URI: | http://hdl.handle.net/1942/28752 | ISSN: | 2156-3381 | e-ISSN: | 2156-3403 | DOI: | 10.1109/JPHOTOV.2018.2871329 | ISI #: | 000448898400018 | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2019 |
Appears in Collections: | Research publications |
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