Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/28752
Title: | Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si: H Deposition | Authors: | Xu, Menglei Wang, Chong Bearda, Twan Simoen, Eddy Radhakrishnan, Hariharsudan Sivaramakrishnan GORDON, Ivan Li, Wei Szlufcik, Jozef POORTMANS, Jef |
Issue Date: | 2018 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Source: | IEEE Journal of Photovoltaics, 8(6), p. 1539-1545 | Abstract: | A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H-2) plasma treatment followed by in situ intrinsic hydrogenated amorphous silicon (a-Si:H) deposition has been investigated. The impact of H-2 gas flow rate and H-2 plasma processing time on the a-Si:H/c-Si interface passivation quality is studied. Optimal H-2 plasma processing conditions result in the best effective minority carrier lifetime of up to 2.5 ms at an injection level of 1 x 10(15) cm(-3), equivalent to the best effective surface recombination velocity of 4 cm/s. The reasons that enable such superior passivation quality are discussed in this paper based on the characterization of the a-Si:H/c-Si interface and c-Si substrate using transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, and deep-level transient spectroscopy. | Notes: | [Xu, Menglei; Poortmans, Jef] Katholieke Univ Leuven, B-3001 Leuven, Belgium. [Xu, Menglei; Bearda, Twan; Simoen, Eddy; Radhakrishnan, Hariharsudan Sivaramakrishnan; Gordon, Ivan; Szlufcik, Jozef; Poortmans, Jef] IMEC, B-3001 Leuven, Belgium. [Wang, Chong; Li, Wei] Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China. [Bearda, Twan] ENTRAS, B-2800 Mechelen, Belgium. [Simoen, Eddy] Univ Ghent, B-9000 Ghent, Belgium. [Poortmans, Jef] Hasselt Univ, B-3500 Hasselt, Belgium. | Keywords: | Hydrogenated amorphous silicon (a-Si:H);hydrogen (H-2) plasma;passivation;silicon heterojunction (SHJ) solar cells | Document URI: | http://hdl.handle.net/1942/28752 | ISSN: | 2156-3381 | e-ISSN: | 2156-3403 | DOI: | 10.1109/JPHOTOV.2018.2871329 | ISI #: | 000448898400018 | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by _italic_In Situ__italic_ a-Si_H Deposition.pdf Restricted Access | Published version | 2.9 MB | Adobe PDF | View/Open Request a copy |
SCOPUSTM
Citations
2
checked on Sep 3, 2020
WEB OF SCIENCETM
Citations
15
checked on Oct 12, 2024
Page view(s)
106
checked on Sep 6, 2022
Download(s)
98
checked on Sep 6, 2022
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.