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http://hdl.handle.net/1942/29053
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DC Field | Value | Language |
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dc.contributor.author | Schwarze, Martin | - |
dc.contributor.author | Gaul, Christopher | - |
dc.contributor.author | ScholZ, Reinhard | - |
dc.contributor.author | Bussolotti, Fabio | - |
dc.contributor.author | Hofacker, Andreas | - |
dc.contributor.author | Schellhammer, Karl Sebastian | - |
dc.contributor.author | Nell, Bernhard | - |
dc.contributor.author | Naab, Benjamin D. | - |
dc.contributor.author | Bao, Zhenan | - |
dc.contributor.author | SPOLTORE, Donato | - |
dc.contributor.author | VANDEWAL, Koen | - |
dc.contributor.author | Widmer, Johannes | - |
dc.contributor.author | Kera, Satoshi | - |
dc.contributor.author | Ueno, Nobuo | - |
dc.contributor.author | Ortmann, Frank | - |
dc.contributor.author | Leo, Karl | - |
dc.date.accessioned | 2019-08-27T13:25:02Z | - |
dc.date.available | 2019-08-27T13:25:02Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | NATURE MATERIALS, 18(3), p. 242-+ | - |
dc.identifier.issn | 1476-1122 | - |
dc.identifier.uri | http://hdl.handle.net/1942/29053 | - |
dc.description.abstract | Doped organic semiconductors typically exhibit a thermal activation of their electrical conductivity, whose physical origin is still under scientific debate. In this study, we disclose relationships between molecular parameters and the thermal activation energy (EA) of the conductivity, revealing that charge transport is controlled by the properties of host-dopant integer charge transfer complexes (ICTCs) in efficiently doped organic semiconductors. At low doping concentrations, charge transport is limited by the Coulomb binding energy of ICTCs, which can be minimized by systematic modification of the charge distribution on the individual ions. The investigation of a wide variety of material systems reveals that static energetic disorder induced by ICTC dipole moments sets a general lower limit for EA at large doping concentrations. The impact of disorder can be reduced by adjusting the ICTC density and the intramolecular relaxation energy of host ions, allowing an increase of conductivity by many orders of magnitude. | - |
dc.description.sponsorship | We thank O. Kaveh and D. Schutze for performing conductivity measurements, D. Wohrle for supplying F<INF>8</INF>ZnPc, and M.L. Tietze for insightful discussions. M.S. acknowledges financial support by the German Research Foundation (DFG) through the project MatWorldNet LE-747/44-1, the German Academic Exchange Service within the frame of the IPID4all Program and the Graduate Academy of TU Dresden. A.H. acknowledges financial support from the project UNVEiL of the German Federal Ministry of Education and Research (BMBF). S.K. thanks JSPS for financial support (KAKENHI 26248062). N.U. acknowledges support of the Global-COE Program of MEXT (G03) and 21st Century-COE Program of MEXT(G-4) for developing an ultrahigh-sensitivity UPS system. B.N. received funding from the European Union Seventh Framework Programme under grant agreement no. 607232 (THINFACE). F.O. would like to thank the DFG for financial support (project OR-349/1). Grants for computing time from the Zentrum fur Informationsdienste und Hochleistungsrechnen Dresden (ZIH) are gratefully acknowledged. | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.rights | 2019 Springer Nature Publishing AG | - |
dc.subject.other | Electronic properties and materials; Molecular electronics; Organic molecules in materials science; Semiconductors; Surfaces, interfaces and thin films | - |
dc.title | Molecular parameters responsible for thermally activated transport in doped organic semiconductors | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | + | - |
dc.identifier.issue | 3 | - |
dc.identifier.spage | 242 | - |
dc.identifier.volume | 18 | - |
local.format.pages | 9 | - |
local.bibliographicCitation.jcat | A1 | - |
dc.description.notes | [Schwarze, Martin; ScholZ, Reinhard; Hofacker, Andreas; Nell, Bernhard; Spoltore, Donato; Vandewal, Koen; Widmer, Johannes; Leo, Karl] Tech Univ Dresden, Dresden Integrated Ctr Appl Phys & Photon Mat, Dresden, Germany. [Gaul, Christopher; Schellhammer, Karl Sebastian; Ortmann, Frank] Tech Univ Dresden, Ctr Advancing Elect Dresden, Dresden, Germany. [Gaul, Christopher; Schellhammer, Karl Sebastian; Ortmann, Frank] Tech Univ Dresden, Dresden Ctr Computat Mat Sci, Dresden, Germany. [Bussolotti, Fabio; Kera, Satoshi] Inst Mol Sci, Dept Photomol Sci, Okazaki, Aichi, Japan. [Naab, Benjamin D.; Bao, Zhenan] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA. [Ueno, Nobuo] Chiba Univ, Grad Sch Adv Integrat Sci, Chiba, Japan. [Vandewal, Koen] Hasselt Univ, IMO, Diepenbeek, Belgium. [Widmer, Johannes] Heliatek GmbH, Dresden, Germany. | - |
local.publisher.place | LONDON | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.identifier.doi | 10.1038/s41563-018-0277-0 | - |
dc.identifier.isi | 000459017900016 | - |
item.fullcitation | Schwarze, Martin; Gaul, Christopher; ScholZ, Reinhard; Bussolotti, Fabio; Hofacker, Andreas; Schellhammer, Karl Sebastian; Nell, Bernhard; Naab, Benjamin D.; Bao, Zhenan; SPOLTORE, Donato; VANDEWAL, Koen; Widmer, Johannes; Kera, Satoshi; Ueno, Nobuo; Ortmann, Frank & Leo, Karl (2019) Molecular parameters responsible for thermally activated transport in doped organic semiconductors. In: NATURE MATERIALS, 18(3), p. 242-+. | - |
item.fulltext | With Fulltext | - |
item.validation | ecoom 2020 | - |
item.contributor | Schwarze, Martin | - |
item.contributor | Gaul, Christopher | - |
item.contributor | ScholZ, Reinhard | - |
item.contributor | Bussolotti, Fabio | - |
item.contributor | Hofacker, Andreas | - |
item.contributor | Schellhammer, Karl Sebastian | - |
item.contributor | Nell, Bernhard | - |
item.contributor | Naab, Benjamin D. | - |
item.contributor | Bao, Zhenan | - |
item.contributor | SPOLTORE, Donato | - |
item.contributor | VANDEWAL, Koen | - |
item.contributor | Widmer, Johannes | - |
item.contributor | Kera, Satoshi | - |
item.contributor | Ueno, Nobuo | - |
item.contributor | Ortmann, Frank | - |
item.contributor | Leo, Karl | - |
item.accessRights | Restricted Access | - |
crisitem.journal.issn | 1476-1122 | - |
crisitem.journal.eissn | 1476-4660 | - |
Appears in Collections: | Research publications |
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10.1038@s41563-018-0277-0.pdf Restricted Access | Published version | 2.5 MB | Adobe PDF | View/Open Request a copy |
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