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Title: | Molecular parameters responsible for thermally activated transport in doped organic semiconductors | Authors: | Schwarze, Martin Gaul, Christopher ScholZ, Reinhard Bussolotti, Fabio Hofacker, Andreas Schellhammer, Karl Sebastian Nell, Bernhard Naab, Benjamin D. Bao, Zhenan SPOLTORE, Donato VANDEWAL, Koen Widmer, Johannes Kera, Satoshi Ueno, Nobuo Ortmann, Frank Leo, Karl |
Issue Date: | 2019 | Publisher: | NATURE PUBLISHING GROUP | Source: | NATURE MATERIALS, 18(3), p. 242-+ | Abstract: | Doped organic semiconductors typically exhibit a thermal activation of their electrical conductivity, whose physical origin is still under scientific debate. In this study, we disclose relationships between molecular parameters and the thermal activation energy (EA) of the conductivity, revealing that charge transport is controlled by the properties of host-dopant integer charge transfer complexes (ICTCs) in efficiently doped organic semiconductors. At low doping concentrations, charge transport is limited by the Coulomb binding energy of ICTCs, which can be minimized by systematic modification of the charge distribution on the individual ions. The investigation of a wide variety of material systems reveals that static energetic disorder induced by ICTC dipole moments sets a general lower limit for EA at large doping concentrations. The impact of disorder can be reduced by adjusting the ICTC density and the intramolecular relaxation energy of host ions, allowing an increase of conductivity by many orders of magnitude. | Notes: | [Schwarze, Martin; ScholZ, Reinhard; Hofacker, Andreas; Nell, Bernhard; Spoltore, Donato; Vandewal, Koen; Widmer, Johannes; Leo, Karl] Tech Univ Dresden, Dresden Integrated Ctr Appl Phys & Photon Mat, Dresden, Germany. [Gaul, Christopher; Schellhammer, Karl Sebastian; Ortmann, Frank] Tech Univ Dresden, Ctr Advancing Elect Dresden, Dresden, Germany. [Gaul, Christopher; Schellhammer, Karl Sebastian; Ortmann, Frank] Tech Univ Dresden, Dresden Ctr Computat Mat Sci, Dresden, Germany. [Bussolotti, Fabio; Kera, Satoshi] Inst Mol Sci, Dept Photomol Sci, Okazaki, Aichi, Japan. [Naab, Benjamin D.; Bao, Zhenan] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA. [Ueno, Nobuo] Chiba Univ, Grad Sch Adv Integrat Sci, Chiba, Japan. [Vandewal, Koen] Hasselt Univ, IMO, Diepenbeek, Belgium. [Widmer, Johannes] Heliatek GmbH, Dresden, Germany. | Keywords: | Electronic properties and materials; Molecular electronics; Organic molecules in materials science; Semiconductors; Surfaces, interfaces and thin films | Document URI: | http://hdl.handle.net/1942/29053 | ISSN: | 1476-1122 | e-ISSN: | 1476-4660 | DOI: | 10.1038/s41563-018-0277-0 | ISI #: | 000459017900016 | Rights: | 2019 Springer Nature Publishing AG | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2020 |
Appears in Collections: | Research publications |
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10.1038@s41563-018-0277-0.pdf Restricted Access | Published version | 2.5 MB | Adobe PDF | View/Open Request a copy |
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