Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2973
Full metadata record
DC FieldValueLanguage
dc.contributor.authorDREESEN, Raf-
dc.contributor.authorCROES, Kristof-
dc.contributor.authorMANCA, Jean-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorPergoot, A-
dc.contributor.authorGroeseneken, G-
dc.date.accessioned2007-11-23T08:58:01Z-
dc.date.available2007-11-23T08:58:01Z-
dc.date.issued1999-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 39(6-7). p. 785-790-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/2973-
dc.description.abstractBy using a new, state-of-the-art measurement technique, the hot-carrier degradation of LDD nMOSFETs is studied. This high-resolution measurement technique, allows the measurement of degradation levels as low as 0.03%. A new model based on Goo et al. [1] has been developed and verified in the full region between 0.03 up to almost 10% for the ageing parameter I-d,I-lin. The introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour at real life operating conditions. (C) 1999 Elsevier Science Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleModelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique.-
dc.typeJournal Contribution-
dc.identifier.epage790-
dc.identifier.issue6-7-
dc.identifier.spage785-
dc.identifier.volume39-
local.format.pages6-
dc.description.notesLimburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(99)00101-8-
dc.identifier.isi000082838700010-
item.accessRightsClosed Access-
item.validationecoom 2000-
item.fulltextNo Fulltext-
item.fullcitationDREESEN, Raf; CROES, Kristof; MANCA, Jean; DE CEUNINCK, Ward; DE SCHEPPER, Luc; Pergoot, A & Groeseneken, G (1999) Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique.. In: MICROELECTRONICS RELIABILITY, 39(6-7). p. 785-790.-
item.contributorDREESEN, Raf-
item.contributorCROES, Kristof-
item.contributorMANCA, Jean-
item.contributorDE CEUNINCK, Ward-
item.contributorDE SCHEPPER, Luc-
item.contributorPergoot, A-
item.contributorGroeseneken, G-
Appears in Collections:Research publications
Show simple item record

SCOPUSTM   
Citations

11
checked on Sep 3, 2020

WEB OF SCIENCETM
Citations

8
checked on Apr 22, 2024

Page view(s)

114
checked on Sep 28, 2023

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.