Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/2973
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dc.contributor.authorDREESEN, Raf-
dc.contributor.authorCROES, Kristof-
dc.contributor.authorMANCA, Jean-
dc.contributor.authorDE CEUNINCK, Ward-
dc.contributor.authorDE SCHEPPER, Luc-
dc.contributor.authorPergoot, A-
dc.contributor.authorGroeseneken, G-
dc.date.accessioned2007-11-23T08:58:01Z-
dc.date.available2007-11-23T08:58:01Z-
dc.date.issued1999-
dc.identifier.citationMICROELECTRONICS RELIABILITY, 39(6-7). p. 785-790-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/1942/2973-
dc.description.abstractBy using a new, state-of-the-art measurement technique, the hot-carrier degradation of LDD nMOSFETs is studied. This high-resolution measurement technique, allows the measurement of degradation levels as low as 0.03%. A new model based on Goo et al. [1] has been developed and verified in the full region between 0.03 up to almost 10% for the ageing parameter I-d,I-lin. The introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour at real life operating conditions. (C) 1999 Elsevier Science Ltd. All rights reserved.-
dc.language.isoen-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.titleModelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique.-
dc.typeJournal Contribution-
dc.identifier.epage790-
dc.identifier.issue6-7-
dc.identifier.spage785-
dc.identifier.volume39-
local.format.pages6-
dc.description.notesLimburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium.-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.bibliographicCitation.oldjcatA1-
dc.identifier.doi10.1016/S0026-2714(99)00101-8-
dc.identifier.isi000082838700010-
item.contributorDREESEN, Raf-
item.contributorCROES, Kristof-
item.contributorMANCA, Jean-
item.contributorDE CEUNINCK, Ward-
item.contributorDE SCHEPPER, Luc-
item.contributorPergoot, A-
item.contributorGroeseneken, G-
item.accessRightsClosed Access-
item.fullcitationDREESEN, Raf; CROES, Kristof; MANCA, Jean; DE CEUNINCK, Ward; DE SCHEPPER, Luc; Pergoot, A & Groeseneken, G (1999) Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique.. In: MICROELECTRONICS RELIABILITY, 39(6-7). p. 785-790.-
item.validationecoom 2000-
item.fulltextNo Fulltext-
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