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http://hdl.handle.net/1942/2973
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DC Field | Value | Language |
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dc.contributor.author | DREESEN, Raf | - |
dc.contributor.author | CROES, Kristof | - |
dc.contributor.author | MANCA, Jean | - |
dc.contributor.author | DE CEUNINCK, Ward | - |
dc.contributor.author | DE SCHEPPER, Luc | - |
dc.contributor.author | Pergoot, A | - |
dc.contributor.author | Groeseneken, G | - |
dc.date.accessioned | 2007-11-23T08:58:01Z | - |
dc.date.available | 2007-11-23T08:58:01Z | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | MICROELECTRONICS RELIABILITY, 39(6-7). p. 785-790 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | http://hdl.handle.net/1942/2973 | - |
dc.description.abstract | By using a new, state-of-the-art measurement technique, the hot-carrier degradation of LDD nMOSFETs is studied. This high-resolution measurement technique, allows the measurement of degradation levels as low as 0.03%. A new model based on Goo et al. [1] has been developed and verified in the full region between 0.03 up to almost 10% for the ageing parameter I-d,I-lin. The introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour at real life operating conditions. (C) 1999 Elsevier Science Ltd. All rights reserved. | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique. | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 790 | - |
dc.identifier.issue | 6-7 | - |
dc.identifier.spage | 785 | - |
dc.identifier.volume | 39 | - |
local.format.pages | 6 | - |
dc.description.notes | Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.bibliographicCitation.oldjcat | A1 | - |
dc.identifier.doi | 10.1016/S0026-2714(99)00101-8 | - |
dc.identifier.isi | 000082838700010 | - |
item.fullcitation | DREESEN, Raf; CROES, Kristof; MANCA, Jean; DE CEUNINCK, Ward; DE SCHEPPER, Luc; Pergoot, A & Groeseneken, G (1999) Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique.. In: MICROELECTRONICS RELIABILITY, 39(6-7). p. 785-790. | - |
item.fulltext | No Fulltext | - |
item.validation | ecoom 2000 | - |
item.contributor | DREESEN, Raf | - |
item.contributor | CROES, Kristof | - |
item.contributor | MANCA, Jean | - |
item.contributor | DE CEUNINCK, Ward | - |
item.contributor | DE SCHEPPER, Luc | - |
item.contributor | Pergoot, A | - |
item.contributor | Groeseneken, G | - |
item.accessRights | Closed Access | - |
Appears in Collections: | Research publications |
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