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http://hdl.handle.net/1942/2973
Title: | Modelling hot-carrier degradation of LDD NMOSFETs by using a high-resolution measurement technique. | Authors: | DREESEN, Raf CROES, Kristof MANCA, Jean DE CEUNINCK, Ward DE SCHEPPER, Luc Pergoot, A Groeseneken, G |
Issue Date: | 1999 | Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | Source: | MICROELECTRONICS RELIABILITY, 39(6-7). p. 785-790 | Abstract: | By using a new, state-of-the-art measurement technique, the hot-carrier degradation of LDD nMOSFETs is studied. This high-resolution measurement technique, allows the measurement of degradation levels as low as 0.03%. A new model based on Goo et al. [1] has been developed and verified in the full region between 0.03 up to almost 10% for the ageing parameter I-d,I-lin. The introduction of a simultaneous non-linear least-square fit of the degradation curves has been successful for predicting the complete degradation behaviour at real life operating conditions. (C) 1999 Elsevier Science Ltd. All rights reserved. | Notes: | Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, B-3590 Diepenbeek, Belgium. Alcatel Microelect, B-9700 Oudenaarde, Belgium. IMEC, B-3001 Heverlee, Belgium.Dreesen, R, Limburgs Univ Ctr, Inst Mat Res, Div Mat Phys, Univ Campus,Wetenschapspk 1, B-3590 Diepenbeek, Belgium. | Document URI: | http://hdl.handle.net/1942/2973 | DOI: | 10.1016/S0026-2714(99)00101-8 | ISI #: | 000082838700010 | Type: | Journal Contribution | Validations: | ecoom 2000 |
Appears in Collections: | Research publications |
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