Please use this identifier to cite or link to this item:
Title: Stress relaxation in Al-Cu and Al-Si-Cu thin films
Authors: Witvrouw, A
Proost, J
Roussel, P
COSEMANS, Patrick Peter 
Maex, K
Issue Date: 1999
Source: JOURNAL OF MATERIALS RESEARCH, 14(4). p. 1246-1254
Abstract: Substrate curvature measurements were used to study stress changes during thermal cycling and isothermal tensile stress relaxation in 800 nm Al-0,5 wt% Cu and Al-l wt% Si-0.5 wt% Cu films. For both compositions dislocation glide can describe the relaxation data well for temperatures up to 120 degrees C for Al-Si-Cu and up to 100 degrees C for Al-Cu. The average activation energy for Al-Si-Cu and Al-Cu is 1.7 +/- 0.2 eV and 3.0 +/- 0.3 eV, respectively. The athermal flow stress is the same for both and equal to 600 +/- 200 MPa. This result is consistent with the obstacles for glide being Al2Cu precipitates, which, in the case of Al-Si-Cu, are fine and can be cut by the dislocations, and, in the case of Al-Cu, are strong and provide Orowan strengthening. Also, the stress changes during thermal cycling in the Al-Cu films are different from these in the Al-Si-Cu films. For Al-Cu films, the room temperature stress decreases after each thermal cycle, while for Al-Si-Cu stress changes during thermal cycling are stable from the second cycle on. These observations are supported by thorough transmission electron microscopy (TEM) studies.
Notes: IMEC, B-3001 Louvain, Belgium. Limburgs Univ Ctr, Div Mat Phys, B-3590 Diepenbeek, Belgium.Witvrouw, A, IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.
Document URI:
ISI #: 000082550400016
Type: Journal Contribution
Validations: ecoom 2000
Appears in Collections:Research publications

Show full item record


checked on May 22, 2022

Page view(s)

checked on May 25, 2022

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.