A Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31481

Title:	A Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States
Authors:	Simoen, E Rothschild, A. VERMANG, Bart POORTMANS, Jef Mertens, R.
Issue Date:	2011
Publisher:
Source:	ECS Transactions, 3 (4) , p. 160-162 -44
Series/Report:	ECS Transactions
Series/Report no.:	41
Abstract:	Deep Level Transient Spectroscopy (DLTS) has been applied to study the interface states of 5 nm Atomic Layer Deposited (ALD) Al2O3 films on p-type Si. In addition, the passivation of the interface states by Forming Gas Anneal (FGA) and Firing has been explored. It is shown that the near mid-gap density of interface states (D-it) is successfully reduced by both treatments. From a comparison with 5 nm SiO2 reference capacitors it can be concluded that similar interface defects are observed, suggesting that they are dominated by the thin interfacial SiO2 layer formed during ALD.
Document URI:	http://hdl.handle.net/1942/31481
Link to publication/dataset:	http://doi.org/10.1149/1.3628607
ISBN:	978-1-60768-258-5 978-1-56677-904-3
DOI:	10.1149/1.3628607
ISI #:	WOS:000309530700005
Category:	A1
Type:	Proceedings Paper
Appears in Collections:	Research publications

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