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http://hdl.handle.net/1942/31481
Title: | A Deep-Level Transient Spectroscopy Comparison of the SiO2/Si and Al2O3/Si Interface States | Authors: | Simoen, E Rothschild, A. VERMANG, Bart POORTMANS, Jef Mertens, R. |
Issue Date: | 2011 | Publisher: | Source: | ECS Transactions, 3 (4) , p. 160-162 -44 | Series/Report: | ECS Transactions | Series/Report no.: | 41 | Abstract: | Deep Level Transient Spectroscopy (DLTS) has been applied to study the interface states of 5 nm Atomic Layer Deposited (ALD) Al2O3 films on p-type Si. In addition, the passivation of the interface states by Forming Gas Anneal (FGA) and Firing has been explored. It is shown that the near mid-gap density of interface states (D-it) is successfully reduced by both treatments. From a comparison with 5 nm SiO2 reference capacitors it can be concluded that similar interface defects are observed, suggesting that they are dominated by the thin interfacial SiO2 layer formed during ALD. | Document URI: | http://hdl.handle.net/1942/31481 | Link to publication/dataset: | http://doi.org/10.1149/1.3628607 | ISBN: | 978-1-60768-258-5 978-1-56677-904-3 |
DOI: | 10.1149/1.3628607 | ISI #: | WOS:000309530700005 | Category: | A1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
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