Please use this identifier to cite or link to this item:
http://hdl.handle.net/1942/31482
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | VERMANG, Bart | - |
dc.date.accessioned | 2020-07-28T12:28:16Z | - |
dc.date.available | 2020-07-28T12:28:16Z | - |
dc.date.issued | 2014 | - |
dc.date.submitted | 2020-07-28T12:26:05Z | - |
dc.identifier.citation | Solar Energy Materials and Solar Cells, 123 , p. 166 -170 | - |
dc.identifier.uri | http://hdl.handle.net/1942/31482 | - |
dc.description.abstract | The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga) Se-2 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga]+[In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature. (C) 2014 Elsevier B.V. All rights reserved. | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject.other | Photovoltaics | - |
dc.subject.other | Solar energy | - |
dc.subject.other | Co-evaporation | - |
dc.subject.other | Thin film solar cells | - |
dc.subject.other | Cu(InGa)Se-2 (CIGS) | - |
dc.title | The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells | - |
dc.type | Journal Contribution | - |
dc.identifier.epage | 170 | - |
dc.identifier.spage | 166 | - |
dc.identifier.volume | 123 | - |
local.bibliographicCitation.jcat | A1 | - |
local.publisher.place | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS | - |
local.type.refereed | Refereed | - |
local.type.specified | Article | - |
dc.source.type | Article | - |
dc.identifier.doi | 10.1016/j.solmat.2014.01.006 | - |
dc.identifier.isi | WOS:000333491500021 | - |
dc.identifier.url | http://doi.org/10.1016/j.solmat.2014.01.006 | - |
dc.identifier.eissn | - | |
local.provider.type | bibtex | - |
local.uhasselt.uhpub | no | - |
item.fullcitation | VERMANG, Bart (2014) The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells. In: Solar Energy Materials and Solar Cells, 123 , p. 166 -170. | - |
item.fulltext | No Fulltext | - |
item.contributor | VERMANG, Bart | - |
item.accessRights | Closed Access | - |
crisitem.journal.issn | 0927-0248 | - |
crisitem.journal.eissn | 1879-3398 | - |
Appears in Collections: | Research publications |
SCOPUSTM
Citations
16
checked on Sep 7, 2020
WEB OF SCIENCETM
Citations
19
checked on Sep 28, 2024
Page view(s)
24
checked on Jul 28, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.