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http://hdl.handle.net/1942/31482
Title: | The effect of high growth temperature on Cu(In,Ga)Se2 thin film solar cells | Authors: | VERMANG, Bart | Issue Date: | 2014 | Publisher: | ELSEVIER SCIENCE BV | Source: | Solar Energy Materials and Solar Cells, 123 , p. 166 -170 | Abstract: | The morphological, elemental distribution and electrical performance effects of increasing the Cu(In,Ga) Se-2 (CIGS) growth substrate temperature are studied. While the increased substrate growth temperature with no other modifications led to increased CIGS grain size, it also resulted in depth profile flattening of the [Ga]/([Ga]+[In]) ratio. Tuning the Ga profile in the high temperature process led to a more desirable [Ga]/([Ga]+[In]) depth profile and allowed a comparison between high and standard temperature. Devices prepared at higher temperature showed an improved grain size and the electrical performance is very similar to that of the reference sample prepared at a standard temperature. (C) 2014 Elsevier B.V. All rights reserved. | Keywords: | Photovoltaics;Solar energy;Co-evaporation;Thin film solar cells;Cu(InGa)Se-2 (CIGS) | Document URI: | http://hdl.handle.net/1942/31482 | Link to publication/dataset: | http://doi.org/10.1016/j.solmat.2014.01.006 | ISSN: | 0927-0248 | e-ISSN: | 1879-3398 | DOI: | 10.1016/j.solmat.2014.01.006 | ISI #: | WOS:000333491500021 | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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