Study of Room Temperature Photoluminescence For 1-stage Co-Evaporated Ultra-Thin Cu(In,Ga)Se2 Solar Cells

Abstract

Room temperature photoluminescence measurement has been carried out on 1-stage co-evaporated Cu(In,Ga)Se-2 thin film in order to investigate the effect of ammonium sulfide (NH4)(2)S surface treatment. The defect related PL peak in the as-deposited CIGS thin film changes with CGI ratio. The surface treatment leads to an increase in the main PL intensity by a factor of similar to 10. The lifetime of minority carriers is slightly increased after surface treatment, and it is observed that a low-Cu region is more affected than a high-Cu region.