Study of Room Temperature Photoluminescence For 1-stage Co-Evaporated Ultra-Thin Cu(In,Ga)Se2 Solar Cells

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31485

Title:	Study of Room Temperature Photoluminescence For 1-stage Co-Evaporated Ultra-Thin Cu(In,Ga)Se2 Solar Cells
Authors:	BULDU KOHL, Dilara DE WILD, Jessica KOHL, Thierry BIRANT, Gizem BRAMMERTZ, Guy MEURIS, Marc POORTMANS, Jef VERMANG, Bart
Issue Date:	2019
Publisher:	IEEE
Source:	2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), p. 0920 -0922
Series/Report:	IEEE Photovoltaic Specialists Conference
Series/Report no.:	46
Abstract:	Room temperature photoluminescence measurement has been carried out on 1-stage co-evaporated Cu(In,Ga)Se-2 thin film in order to investigate the effect of ammonium sulfide (NH4)(2)S surface treatment. The defect related PL peak in the as-deposited CIGS thin film changes with CGI ratio. The surface treatment leads to an increase in the main PL intensity by a factor of similar to 10. The lifetime of minority carriers is slightly increased after surface treatment, and it is observed that a low-Cu region is more affected than a high-Cu region.
Keywords:	Cu(In, Ga)Se-2;(NH4)2S surface treatment;room temperature photoluminescence
Document URI:	http://hdl.handle.net/1942/31485
Link to publication/dataset:	http://doi.org/10.1109/pvsc40753.2019.8980832
ISBN:	978-1-7281-0494-2
DOI:	10.1109/pvsc40753.2019.8980832
ISI #:	WOS:000542034900190
Rights:	Copyright 2020 IEEE - All rights reserved.
Category:	C1
Type:	Proceedings Paper
Validations:	ecoom 2021
Appears in Collections:	Research publications

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