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http://hdl.handle.net/1942/31490
Title: | Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum | Authors: | Simoen, E Rothschild, A VERMANG, Bart POORTMANS, Jef Mertens, R |
Issue Date: | 2011 | Publisher: | ELECTROCHEMICAL SOC INC | Source: | ELECTROCHEMICAL AND SOLID STATE LETTERS, 14 (9) , p. H362 -H364 | Abstract: | The interface-state spectrum at the Al2O3/p-Si interface is investigated by Deep-Level Transient Spectroscopy on Metal-Oxide-Semiconductor (MOS) capacitors. It is shown that a Forming Gas Anneal or firing step leads to a significant reduction of the density of interface states (D-it). At the same time, it is found that the peak activation energy of the D-it distribution lowers towards the valence band of Si. From a comparison with the DLTS data on 5 nm SiO2 MOS capacitors, it is concluded that the same type of states is observed for both dielectrics, implying that the interface properties are determined by the thin interfacial SiO2 layer. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3597661] All rights reserved. | Keywords: | alumina;aluminium;annealing;deep level transient spectroscopy;elemental semiconductors;firing (materials);interface states;MOS capacitors;semiconductor-insulator boundaries;silicon;valence bands | Document URI: | http://hdl.handle.net/1942/31490 | ISSN: | 1099-0062 | DOI: | 10.1149/1.3597661 | ISI #: | WOS:000292521900014 | Rights: | 2011 ECS - The Electrochemical Society | Category: | A1 | Type: | Journal Contribution |
Appears in Collections: | Research publications |
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