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http://hdl.handle.net/1942/31494
Title: | Al2O3 surface passivation characterized on hydrophobic and hydrophilic c-Si by a combination of QSSPC, CV, XPS and FTIR | Authors: | Goverde, H VERMANG, Bart Morato, A John, J Horzel, J Meneghesso, G POORTMANS, Jef |
Issue Date: | 2012 | Publisher: | ELSEVIER SCIENCE BV | Source: | ELSEVIER SCIENCE BV, p. 355 -360 | Series/Report: | Energy Procedia | Abstract: | In this work, the influence of the c-Si surface finishing (hydrophobic/hydrophilic) prior to the deposition of the Al2O3 passivation layer on the passivation quality is investigated. The samples are characterized by a combination of Quasi-Steady-State-PhotoConductance (QSSPC) Capacity-Conductance (CV), X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed InfraRed (FTIR) measurements. Furthermore, FTIR measurements are used to determine the thickness of interfacial SiOx layer. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference. | Keywords: | Si;Surface Passivavation;Al2O3;FTIR;CV;XPS;QSSPC | Document URI: | http://hdl.handle.net/1942/31494 | DOI: | 10.1016/j.egypro.2012.07.076 | ISI #: | WOS:000313202000057 | Rights: | 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientifi c committee of the SiliconPV 2012 conference.Open access under CC BY-NC-ND license.Open access under CC BY-NC-ND license. | Category: | C1 | Type: | Proceedings Paper |
Appears in Collections: | Research publications |
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1-s2.0-S1876610212012891-main.pdf | Published version | 1.05 MB | Adobe PDF | View/Open |
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