Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31495
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dc.contributor.authorVERMANG, Bart-
dc.contributor.authorCHOULAT, Patrick-
dc.contributor.authorGoverde, H-
dc.contributor.authorHorzel, J-
dc.contributor.authorJohn, J-
dc.contributor.authorMertens, R-
dc.contributor.authorPOORTMANS, Jef-
dc.date.accessioned2020-07-31T07:56:46Z-
dc.date.available2020-07-31T07:56:46Z-
dc.date.issued2012-
dc.date.submitted2020-07-30T09:26:12Z-
dc.identifier.citationELSEVIER SCIENCE BV, p. 325 -329-
dc.identifier.issn1876-6102-
dc.identifier.urihttp://hdl.handle.net/1942/31495-
dc.description.abstractAtomic layer deposition (ALD) of thin Al2O3 (<= 10 nm) films is used to improve both front and rear surface passivation of large-area screen-printed p-type CZ Si passivated emitter and rear cells (PERC). As emitter passivation, the SiNx anti reflection coating (ARC) is capped with Al2O3, giving improved hydrogenation during co-firing and a front recombination current (J(0,front)) of 128 +/- 5 fA/cm(2). As rear surface passivation, a blister-free stack of Al2O3/SiOx/SiNx is employed, leading to optimal back reflection and a rear recombination current (J(0,rear)) of 92 +/- 6 fA/cm(2). Internal quantum efficiency (IQE) measurements clearly confirm the improved passivation properties of both Al2O3-based stacks, even compared to passivation stacks based on thermally grown SiO2. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.-
dc.description.sponsorshipThe authors greatly acknowledge the support of the IMEC Industrial Affiliated Partner (IIAP-PV) program and the imec PV support team.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.relation.ispartofseriesEnergy Procedia-
dc.rights2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference CC BY-NC-ND license-
dc.subject.otherPhotovoltaics-
dc.subject.otherSi-
dc.subject.otherPERC-
dc.subject.othersurface passivation-
dc.subject.otherAl2O3-
dc.subject.otherALD-
dc.titleIntegration of Al2O3 as front and rear surface passivation for large-area screen-printed p-type Si PERC-
dc.typeProceedings Paper-
local.bibliographicCitation.conferencedateAPR 03-05, 2012-
local.bibliographicCitation.conferencename2nd International Conference on Crystalline Silicon Photovoltaics (SiliconPV)-
local.bibliographicCitation.conferenceplaceIMEC, Leuven, BELGIUM-
dc.identifier.epage329-
dc.identifier.spage325-
dc.identifier.volume27-
local.bibliographicCitation.jcatC1-
local.publisher.placeSARA BURGERHARTSTRAAT 25, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
dc.identifier.doi10.1016/j.egypro.2012.07.071-
dc.identifier.isiWOS:000313202000052-
dc.identifier.eissn-
local.provider.typeWeb of Science-
local.uhasselt.uhpubno-
item.fulltextWith Fulltext-
item.contributorVERMANG, Bart-
item.contributorCHOULAT, Patrick-
item.contributorGoverde, H-
item.contributorHorzel, J-
item.contributorJohn, J-
item.contributorMertens, R-
item.contributorPOORTMANS, Jef-
item.fullcitationVERMANG, Bart; CHOULAT, Patrick; Goverde, H; Horzel, J; John, J; Mertens, R & POORTMANS, Jef (2012) Integration of Al2O3 as front and rear surface passivation for large-area screen-printed p-type Si PERC. In: ELSEVIER SCIENCE BV, p. 325 -329.-
item.accessRightsOpen Access-
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