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http://hdl.handle.net/1942/31502
Title: | KF Postdeposition Treatment in N-2 of Single-Stage Thin Cu(In,Ga)Se-2 Absorber Layers | Authors: | DE WILD, Jessica KOHL, Thierry BULDU KOHL, Dilara BIRANT, Gizem Parragh, DM BRAMMERTZ, Guy MEURIS, Marc POORTMANS, Jef VERMANG, Bart |
Issue Date: | 2020 | Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Source: | IEEE Journal of Photovoltaics, 10 (1) , p. 255 -258 | Abstract: | Thin (<500 nm) single-stage coevaporated Cu(In,Ga)Se-2 absorber layers are treated with a KF postanneal in N-2 atmosphere. The conditions of the postanneal initial acceptor concentration and the temperature are varied. Solar cells are characterized with current-voltage and capacitance-voltage measurements. Efficiencies up to 12% with an open-circuit voltage (V-oc) of >640 mV were achieved after the KF treatment. From SCAPS simulations and temperature dependent current voltage-measurements, it is concluded that the V-oc of these cells are limited by backcontact surface recombination and, thus, further improvements require passivation of the back contact. | Keywords: | Alkali treatment;Cu(In,Ga)Se-2 (CIGS);single-stage process;thin absorber | Document URI: | http://hdl.handle.net/1942/31502 | ISSN: | 2156-3381 | e-ISSN: | 2156-3403 | DOI: | 10.1109/jphotov.2019.2947758 | ISI #: | WOS:000535673700034 | Rights: | 2019 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2021 |
Appears in Collections: | Research publications |
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Final_version.pdf | Peer-reviewed author version | 471.85 kB | Adobe PDF | View/Open |
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