Spatially-separated atomic layer deposition of Al<inf>2</inf>O<inf>3</inf>, a new option for high-throughput si solar cell passivation

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31506

Title:	Spatially-separated atomic layer deposition of Al<inf>2</inf>O<inf>3</inf>, a new option for high-throughput si solar cell passivation
Authors:	VERMANG, Bart Werner, F. Stals, W. Lorenz Rothschild, A. John, J. POORTMANS, Jef Mertens, R. Gortzen, R. Poodt, P. Roozeboom, F. Schmidt, J.
Issue Date:	2011
Source:	p. 001144 -001149
Series/Report no.:	37
Document URI:	http://hdl.handle.net/1942/31506
ISBN:	978-1-4244-9965-6 978-1-4244-9966-3 978-1-4244-9964-9
DOI:	10.1109/pvsc.2011.6186155
Category:	C1
Type:	Proceedings Paper
Appears in Collections:	Research publications

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