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http://hdl.handle.net/1942/31542
Title: | Optoelectronic properties of thin film Cu2ZnGeSe4 solar cells | Authors: | Sahayaraj, S BRAMMERTZ, Guy VERMANG, Bart Schnabel, T Ahlswede, E Huang, Z. Ranjbar, S MEURIS, Marc Vleugels, J POORTMANS, Jef |
Issue Date: | 2017 | Publisher: | ELSEVIER SCIENCE BV | Source: | Solar energy materials and solar cells, 171 , p. 136 -141 | Abstract: | The fabrication and properties of a Ge-based Kesterite Cu2ZnGeSe4 (CZGSe) solar cell are discussed. The existence of the quaternary compound has been verified by physical methods such as X Ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS). The Cu2ZnGeSe4 solar cell has a power conversion efficiency (PCE) of 5.5% under AM1.5G illumination which is among the highest reported for pure Ge substitution. Detailed low temperature current-voltage and time-resolved photoluminescence measurements show that the Cu2ZnGeSe4 absorber has less bulk defects and less band tailing in contrast to the typical characteristics of Cu2ZnSnSe4 devices. These beneficial opto-electronic properties also resulted in a high open circuit voltage (V-OC,) of 744 mV which is amongst the highest values reported for Kesterite Materials. | Keywords: | Kesterites;High band gap;Potential fluctuations;Band gap fluctuations;Ge substitution | Document URI: | http://hdl.handle.net/1942/31542 | ISSN: | 0927-0248 | e-ISSN: | 1879-3398 | DOI: | 10.1016/j.solmat.2017.06.050 | ISI #: | WOS:000408298300017 | Rights: | 2017 Elsevier B.V. All rights reserved | Category: | A1 | Type: | Journal Contribution | Validations: | ecoom 2018 |
Appears in Collections: | Research publications |
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