Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31565
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dc.contributor.authorMolle, A.-
dc.contributor.authorLamagna, L.-
dc.contributor.authorGrazianetti, C.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMerckling, C.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorSpiga, S.-
dc.contributor.authorFanciulli, M.-
dc.date.accessioned2020-08-05T12:17:04Z-
dc.date.available2020-08-05T12:17:04Z-
dc.date.issued2011-
dc.date.submitted2020-07-31T12:22:57Z-
dc.identifier.citationApplied physics letters, 99 (19) (Art N° 193505)-
dc.identifier.urihttp://hdl.handle.net/1942/31565-
dc.description.abstractTuning the desorption temperature of an As cap layer allows to achieve In0.53Ga0.47As(001) surfaces with (2 x 4) and (4 x 2) reconstructions which exhibit different chemical reactivity upon exposure in atmospheric pressure. Trimethyl-Al based atomic layer deposition of Al2O3 films on the two exposed surfaces causes a non-equivalent interface composition. This behavior is associated with a worse electrical quality of the interface with the exposed (4 x 2) In0.53Ga0.47As reconstruction. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3659688]-
dc.description.sponsorshipWe acknowledge grant from ARAMIS Project and M. Alia (MDM) for metal gate deposition-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights2011 American Institute of Physics-
dc.titleReconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition-
dc.typeJournal Contribution-
dc.identifier.issue19-
dc.identifier.volume99-
local.bibliographicCitation.jcatA1-
dc.description.notesMolle, A (corresponding author), IMM CNR, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy.-
dc.description.notesalessandro.molle@mdm.imm.cnr.it-
local.publisher.placeCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr193505-
dc.identifier.doi10.1063/1.3659688-
dc.identifier.isiWOS:000297030200074-
dc.contributor.orcidMolle, Alessandro/0000-0002-3860-4120; Grazianetti,-
dc.contributor.orcidCarlo/0000-0003-0060-9804; Spiga, Sabina/0000-0001-7293-7503; Fanciulli,-
dc.contributor.orcidMarco/0000-0003-2951-0859; Merckling, Clement/0000-0003-3084-2543;-
dc.contributor.orcidBrammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Molle, A.; Lamagna, L.; Grazianetti, C.; Spiga, S.; Fanciulli, M.] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy.-
local.description.affiliation[Brammertz, G.; Merckling, C.; Caymax, M.] IMEC, B-3001 Heverlee, Belgium.-
local.description.affiliation[Grazianetti, C.; Fanciulli, M.] Univ Milan, Dipartimento Sci Mat, Milan, Italy.-
item.accessRightsOpen Access-
item.fullcitationMolle, A.; Lamagna, L.; Grazianetti, C.; BRAMMERTZ, Guy; Merckling, C.; Caymax, M.; Spiga, S. & Fanciulli, M. (2011) Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition. In: Applied physics letters, 99 (19) (Art N° 193505).-
item.fulltextWith Fulltext-
item.contributorMolle, A.-
item.contributorLamagna, L.-
item.contributorGrazianetti, C.-
item.contributorBRAMMERTZ, Guy-
item.contributorMerckling, C.-
item.contributorCaymax, M.-
item.contributorSpiga, S.-
item.contributorFanciulli, M.-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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