Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31565
Title: Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition
Authors: Molle, A.
Lamagna, L.
Grazianetti, C.
BRAMMERTZ, Guy 
Merckling, C.
Caymax, M.
Spiga, S.
Fanciulli, M.
Issue Date: 2011
Publisher: AMER INST PHYSICS
Source: Applied physics letters, 99 (19) (Art N° 193505)
Abstract: Tuning the desorption temperature of an As cap layer allows to achieve In0.53Ga0.47As(001) surfaces with (2 x 4) and (4 x 2) reconstructions which exhibit different chemical reactivity upon exposure in atmospheric pressure. Trimethyl-Al based atomic layer deposition of Al2O3 films on the two exposed surfaces causes a non-equivalent interface composition. This behavior is associated with a worse electrical quality of the interface with the exposed (4 x 2) In0.53Ga0.47As reconstruction. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3659688]
Notes: Molle, A (corresponding author), IMM CNR, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy.
alessandro.molle@mdm.imm.cnr.it
Document URI: http://hdl.handle.net/1942/31565
ISSN: 0003-6951
e-ISSN: 1077-3118
DOI: 10.1063/1.3659688
ISI #: WOS:000297030200074
Rights: 2011 American Institute of Physics
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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