Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31571
Title: H2S molecular beam passivation of Ge(001)
Authors: Merckling, C.
Chang, Y. C.
Lu, C. Y.
Penaud, J.
El-Kazzi, M.
Bellenger, F.
BRAMMERTZ, Guy 
Hong, M.
Kwo, J.
MEURIS, Marc 
Dekoster, J.
Heyns, M. M.
Caymax, M.
Issue Date: 2011
Publisher: ELSEVIER SCIENCE BV
Source: Microelectronic engineering, 88 (4) , p. 399 -402
Abstract: A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(0 0 1) using molecular H2S. The modification of the semiconductor surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. MOS capacitors are fabricated to extract interface state density, and finally we demonstrate the efficiency of the passivation scheme using a combination with an ultra thin Al interlayer. (C) 2010 Elsevier B.V. All rights reserved.
Notes: Merckling, C (corresponding author), IMEC, Kapeeldref 75, B-3001 Louvain, Belgium.
clement.merckling@imec.be
Keywords: Passivation;H2S;Molecular beam epitaxy;High-mu semiconductors
Document URI: http://hdl.handle.net/1942/31571
ISSN: 0167-9317
e-ISSN: 1873-5568
DOI: 10.1016/j.mee.2010.09.012
ISI #: WOS:000288524100019
Rights: 2010 Elsevier B.V. All rights reserved
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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