Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31572
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dc.contributor.authorSun, Xiao-
dc.contributor.authorCui, Sharon-
dc.contributor.authorAlian, Alireza-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMerckling, Clement-
dc.contributor.authorLin, Dennis-
dc.contributor.authorMa, T. P.-
dc.date.accessioned2020-08-05T12:55:38Z-
dc.date.available2020-08-05T12:55:38Z-
dc.date.issued2012-
dc.date.submitted2020-07-31T13:51:51Z-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, 33 (3) , p. 438 -440-
dc.identifier.urihttp://hdl.handle.net/1942/31572-
dc.description.abstractWe introduce an ac transconductance dispersion method (ACGD) to profile the oxide traps in an MOSFET without needing a body contact. The method extracts the spatial distribution of oxide traps from the frequency dependence of transconductance, which is attributed to charge trapping as modulated by an ac gate voltage. The results from this method have been verified by the use of the multifrequency charge pumping (MFCP) technique. In fact, this method complements the MFCP technique in terms of the trap depth that each method is capable of probing. We will demonstrate the method with InP passivated InGaAs substrates, along with electrically stressed Si N-MOSFETs.-
dc.description.sponsorshipNational Science Foundation under MRSEC [DMR 0520495]; DTRA under HDTRA [1-10-1-0042]-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subject.otherCharge trapping-
dc.subject.otherInGaAs-
dc.subject.otherMOSFET-
dc.subject.otheroxide trap-
dc.subject.otherSi-
dc.subject.otherspatial distribution-
dc.subject.otherstress-
dc.subject.otherSI-SIO2 INTERFACE-
dc.subject.otherDENSITY-
dc.subject.otherNOISE-
dc.titleAC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact-
dc.typeJournal Contribution-
dc.identifier.epage440-
dc.identifier.issue3-
dc.identifier.spage438-
dc.identifier.volume33-
local.bibliographicCitation.jcatA1-
dc.description.notesSun, X (corresponding author), Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA.-
dc.description.notesxiao.sun@yale.edu; Sharon.Cui@yale.edu; Alian@imec.be; brammert@imec.be;-
dc.description.notesmercklin@imec.be; dlin@imec.be; t.ma@yale.edu-
local.publisher.place445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1109/LED.2011.2181318-
dc.identifier.isiWOS:000300580000046-
dc.contributor.orcidMerckling, Clement/0000-0003-3084-2543; Sun, Xiao/0000-0002-7913-7186;-
dc.contributor.orcidBrammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
dc.identifier.eissn1558-0563-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Sun, Xiao; Cui, Sharon; Ma, T. P.] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA.-
local.description.affiliation[Sun, Xiao; Cui, Sharon; Ma, T. P.] Yale Univ, CRISP, New Haven, CT 06511 USA.-
local.description.affiliation[Alian, Alireza; Brammertz, Guy; Merckling, Clement; Lin, Dennis] IMEC, B-3001 Louvain, Belgium.-
item.fulltextNo Fulltext-
item.contributorSun, Xiao-
item.contributorCui, Sharon-
item.contributorAlian, Alireza-
item.contributorBRAMMERTZ, Guy-
item.contributorMerckling, Clement-
item.contributorLin, Dennis-
item.contributorMa, T. P.-
item.fullcitationSun, Xiao; Cui, Sharon; Alian, Alireza; BRAMMERTZ, Guy; Merckling, Clement; Lin, Dennis & Ma, T. P. (2012) AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact. In: IEEE ELECTRON DEVICE LETTERS, 33 (3) , p. 438 -440.-
item.accessRightsClosed Access-
crisitem.journal.issn0741-3106-
crisitem.journal.eissn1558-0563-
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