AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact

Abstract

We introduce an ac transconductance dispersion method (ACGD) to profile the oxide traps in an MOSFET without needing a body contact. The method extracts the spatial distribution of oxide traps from the frequency dependence of transconductance, which is attributed to charge trapping as modulated by an ac gate voltage. The results from this method have been verified by the use of the multifrequency charge pumping (MFCP) technique. In fact, this method complements the MFCP technique in terms of the trap depth that each method is capable of probing. We will demonstrate the method with InP passivated InGaAs substrates, along with electrically stressed Si N-MOSFETs.