Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31583
Title: Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III–V materials
Authors: Molle, Alessandro
BRAMMERTZ, Guy 
Dimoulas, Athanasios
Marchiori, Chiara
Issue Date: 2011
Publisher: ELSEVIER SCIENCE BV
Source: Microelectronic engineering, 88 (4) , p. 323 -323
Notes: Molle, A (corresponding author), CNR IMM, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy.
alessandro.molle@mdm.imm.cnr.it
Document URI: http://hdl.handle.net/1942/31583
ISSN: 0167-9317
e-ISSN: 1873-5568
DOI: 10.1016/j.mee.2011.01.037
ISI #: WOS:000288524100001
Rights: 2011 Published by Elsevier B.V.
Category: A2
Type: Journal Contribution
Appears in Collections:Research publications

Files in This Item:
File Description SizeFormat 
1-s2.0-S0167931711000487-main.pdf
  Restricted Access		Published version158.05 kBAdobe PDFView/Open    Request a copy
Show full item record

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.