Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31584
Title: Improved Performance of In0.53Ga0.47As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO2 Gate Dielectric Grown by Atomic Layer Deposition
Authors: Molle, Alessandro
Lamagna, Luca
Wiemer, Claudia
Spiga, Sabina
Fanciulli, Marco
Merckling, Clement
BRAMMERTZ, Guy 
Caymax, Matty
Issue Date: 2011
Publisher: JAPAN SOC APPLIED PHYSICS
Source: Applied Physics Express, 4 (9) (Art N° 094103)
Abstract: Atomic layer deposition of Al:ZrO2 films on In0.53Ga0.47As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al2O3 gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In0.53Ga0.47As surface. We demonstrates that increasing the number of initial Al2O3 cycles in the growth sequence can improve the physical quality and the electrical response of the Al:ZrO2/In0.53Ga0.47As interface while preserving the overall composition of the oxide. (C) 2011 The Japan Society of Applied Physics
Notes: Molle, A (corresponding author), IMM CNR, Lab MDM, Via C Olivetti 2, I-20864 Agrate Brianza, MB, Italy.
alessandro.molle@mdm.imm.cnr.it
Keywords: AL203
Document URI: http://hdl.handle.net/1942/31584
ISSN: 1882-0778
e-ISSN: 1882-0786
DOI: 10.1143/APEX.4.094103
ISI #: WOS:000294673300029
Rights: 2011 The Japan Society of Applied Physics
Category: A1
Type: Journal Contribution
Appears in Collections:Research publications

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