Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31586
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dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorLin, H. -C.-
dc.contributor.authorMartens, K.-
dc.contributor.authorMercier, D.-
dc.contributor.authorSioncke, S.-
dc.contributor.authorDelabie, A.-
dc.contributor.authorWang, W. E.-
dc.contributor.authorCaymax, M.-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, M.-
dc.date.accessioned2020-08-06T07:18:01Z-
dc.date.available2020-08-06T07:18:01Z-
dc.date.issued2008-
dc.date.submitted2020-07-30T10:05:31Z-
dc.identifier.citationApplied physics letters, 93 (18) (Art N° 183504)-
dc.identifier.urihttp://hdl.handle.net/1942/31586-
dc.description.abstractThe authors apply the conductance method at 25 and 150 degrees C to GaAs-Al2O3 metal-oxide-semiconductor devices in order to derive the interface state distribution (D-it) as a function of energy in the bandgap. The D-it is governed by two large interface state peaks at midgap energies, in agreement with the unified defect model. S-passivation and forming gas annealing reduce the D-it in large parts of the bandgap, mainly close to the valence band, reducing noticeably the room temperature frequency dispersion. However the midgap interface state peaks are not affected by these treatments, such that Fermi level pinning at midgap energies remains.-
dc.description.sponsorshipThe authors acknowledge support by the European Commission’s project FP7-ICT-DUALLOGIC No. 214579 Dualchannel CMOS for (sub)-22 nm high performance logic-
dc.language.isoen-
dc.publisherAMER INST PHYSICS-
dc.rights2008 American Institute of Physics-
dc.subject.otheraluminium compounds-
dc.subject.otherenergy gap-
dc.subject.otherFermi level-
dc.subject.othergallium arsenide-
dc.subject.othergallium compounds-
dc.subject.otherIII-V semiconductors-
dc.subject.otherMIS devices-
dc.titleCapacitance-voltage characterization of GaAs–Al2O3 interfaces-
dc.typeJournal Contribution-
dc.identifier.issue18-
dc.identifier.volume93-
local.bibliographicCitation.jcatA1-
dc.description.notesBrammertz, G (corresponding author), IMEC VZW, Interuniv Microelect Ctr, Kapeldreef 75, B-3001 Louvain, Belgium.-
dc.description.notesguy.brammertz@imec.be-
local.publisher.placeCIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1,-
local.publisher.placeMELVILLE, NY 11747-4501 USA-
local.type.refereedRefereed-
local.type.specifiedArticle-
local.bibliographicCitation.artnr183504-
dc.identifier.doi10.1063/1.3005172-
dc.identifier.isiWOS:000260778100088-
dc.contributor.orcidMartens, Koen/0000-0001-7135-5536; heyns, marc/0000-0002-1199-4341;-
dc.contributor.orcidBrammertz, Guy/0000-0003-1404-7339; Mercier, David/0000-0003-1996-198X-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Brammertz, G.; Lin, H. -C.; Martens, K.; Mercier, D.; Sioncke, S.; Delabie, A.; Wang, W. E.; Caymax, M.; Meuris, M.; Heyns, M.] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium.-
item.fulltextWith Fulltext-
item.contributorBRAMMERTZ, Guy-
item.contributorLin, H. -C.-
item.contributorMartens, K.-
item.contributorMercier, D.-
item.contributorSioncke, S.-
item.contributorDelabie, A.-
item.contributorWang, W. E.-
item.contributorCaymax, M.-
item.contributorMEURIS, Marc-
item.contributorHeyns, M.-
item.fullcitationBRAMMERTZ, Guy; Lin, H. -C.; Martens, K.; Mercier, D.; Sioncke, S.; Delabie, A.; Wang, W. E.; Caymax, M.; MEURIS, Marc & Heyns, M. (2008) Capacitance-voltage characterization of GaAs–Al2O3 interfaces. In: Applied physics letters, 93 (18) (Art N° 183504).-
item.accessRightsOpen Access-
crisitem.journal.issn0003-6951-
crisitem.journal.eissn1077-3118-
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