Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31596
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dc.contributor.authorLin, Dennis-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorSioncke, Sonja-
dc.contributor.authorNyns, Laura-
dc.contributor.authorAlian, Alireza-
dc.contributor.authorWang, Wei-E-
dc.contributor.authorHeyns, Marc-
dc.contributor.authorCaymax, Matty-
dc.contributor.authorHoffmann, Thomas-
dc.date.accessioned2020-08-06T09:46:22Z-
dc.date.available2020-08-06T09:46:22Z-
dc.date.issued2011-
dc.date.submitted2020-08-06T09:00:38Z-
dc.identifier.citationCHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), ELECTROCHEMICAL SOCIETY INC, p. 1065 -1070-
dc.identifier.isbn978-1-60768-235-6-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/1942/31596-
dc.description.abstractRecent developments on CMOS-driven III-V and Ge MOS (Metal-oxide-semiconductor) technologies provide new opportunities in advancing the performance envelope of MOS device as well as the relevant electrical characterization techniques. Understanding the capacitance-voltage (CV) and conductance voltage (GV) responses of the III-V/Ge MOS devices can lead to better assessments of the oxide-semiconductor material systems and more accurate performance predictions.-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOCIETY INC-
dc.relation.ispartofseriesECS Transactions-
dc.titleElectrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates-
dc.typeProceedings Paper-
dc.relation.edition1-
local.bibliographicCitation.conferencedate2011-
local.bibliographicCitation.conferencename10th China Semiconductor Technology International Conference (CSTIC)-
local.bibliographicCitation.conferenceplacePEOPLES R CHINA-
dc.identifier.epage1070-
dc.identifier.spage1065-
local.bibliographicCitation.jcatC1-
dc.description.notesLin, D (corresponding author), IMEC VZW, Kapeldreef 75, B-3001 Louvain, Belgium.-
local.publisher.place65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA-
local.type.refereedRefereed-
local.type.specifiedProceedings Paper-
local.relation.ispartofseriesnr34-
dc.identifier.doi10.1149/1.3567716-
dc.identifier.isiWOS:000300456600165-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339-
local.provider.typewosris-
local.bibliographicCitation.btitleCHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011)-
local.uhasselt.uhpubno-
local.description.affiliation[Lin, Dennis; Brammertz, Guy; Sioncke, Sonja; Nyns, Laura; Alian, Alireza; Wang, Wei-E; Heyns, Marc; Caymax, Matty; Hoffmann, Thomas] IMEC VZW, B-3001 Louvain, Belgium.-
item.fulltextNo Fulltext-
item.contributorLin, Dennis-
item.contributorBRAMMERTZ, Guy-
item.contributorSioncke, Sonja-
item.contributorNyns, Laura-
item.contributorAlian, Alireza-
item.contributorWang, Wei-E-
item.contributorHeyns, Marc-
item.contributorCaymax, Matty-
item.contributorHoffmann, Thomas-
item.fullcitationLin, Dennis; BRAMMERTZ, Guy; Sioncke, Sonja; Nyns, Laura; Alian, Alireza; Wang, Wei-E; Heyns, Marc; Caymax, Matty & Hoffmann, Thomas (2011) Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates. In: CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), ELECTROCHEMICAL SOCIETY INC, p. 1065 -1070.-
item.accessRightsClosed Access-
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