Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31596

Title:	Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates
Authors:	Lin, Dennis BRAMMERTZ, Guy Sioncke, Sonja Nyns, Laura Alian, Alireza Wang, Wei-E Heyns, Marc Caymax, Matty Hoffmann, Thomas
Issue Date:	2011
Publisher:	ELECTROCHEMICAL SOCIETY INC
Source:	CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), ELECTROCHEMICAL SOCIETY INC, p. 1065 -1070
Series/Report:	ECS Transactions
Series/Report no.:	34
Abstract:	Recent developments on CMOS-driven III-V and Ge MOS (Metal-oxide-semiconductor) technologies provide new opportunities in advancing the performance envelope of MOS device as well as the relevant electrical characterization techniques. Understanding the capacitance-voltage (CV) and conductance voltage (GV) responses of the III-V/Ge MOS devices can lead to better assessments of the oxide-semiconductor material systems and more accurate performance predictions.
Notes:	Lin, D (corresponding author), IMEC VZW, Kapeldreef 75, B-3001 Louvain, Belgium.
Document URI:	http://hdl.handle.net/1942/31596
ISBN:	978-1-60768-235-6
DOI:	10.1149/1.3567716
ISI #:	WOS:000300456600165
Category:	C1
Type:	Proceedings Paper
Appears in Collections:	Research publications

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