Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices?

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31597

Title:	Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET Devices?
Authors:	BRAMMERTZ, Guy Alian, A. Lin, H. C. Nyns, L. Sioncke, S. Merckling, C. Wang, W. -E Caymax, M. Hoffmann, T. Y.
Issue Date:	2011
Publisher:	ELECTROCHEMICAL SOC INC
Source:	CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), ELECTROCHEMICAL SOC INC, p. 1017 -1022
Series/Report:	ECS Transactions
Series/Report no.:	34
Abstract:	We will present the defect density at In0.53Ga0.47As and InP interfaces with ALD Al2O3 derived by use of the conductance method and from simulation of low frequency CV-curves. Consequences of the interface state distribution for MOS transistor device operation will be highlighted through 1-dimensional electrostatic simulations. The simulation results will be compared as much as possible to different state-of-the-art transistor results presented in literature.
Notes:	Brammertz, G (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium.
Document URI:	http://hdl.handle.net/1942/31597
ISBN:	978-1-60768-235-6 978-1-60768-234-9
DOI:	10.1149/1.3567708
ISI #:	WOS:000300456600157
Category:	C1
Type:	Proceedings Paper
Appears in Collections:	Research publications

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