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http://hdl.handle.net/1942/31614| Title: | Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE |
Authors: | Cantoro, M. Wang, G. Lin, H. C. Klekachev, A. V. Richard, O. Bender, H. Kim, T. -G. Clemente, F. Adelmann, C. van der Veen, M. H. BRAMMERTZ, Guy Degroote, S. Leys, M. Caymax, M. Heyns, M. M. De Gendt, S. |
Issue Date: | 2011 | Publisher: | WILEY-V C H VERLAG GMBH | Source: | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 208 (1) , p. 129 -135 | Abstract: | In this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)-oriented Si wafers. The NWs, grown at 620 degrees C by metal-organic vapor-phase epitaxy, are vertically aligned and similar to 30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back-gated, single InAs NW field-effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | Notes: | Cantoro, M (corresponding author), IMEC, Kapeldreef 75, B-3001 Louvain, Belgium. cantoro@imec.be |
Keywords: | III-V NANOWIRES;OPTOELECTRONIC DEVICES;SILICON NANOWIRES;EPITAXIAL-GROWTH;SCATTERING;TRANSISTORS;III-V semiconductors;electronic transport;InAs;MOVPE;nanowires;Raman spectroscopy | Document URI: | http://hdl.handle.net/1942/31614 | ISSN: | 1862-6300 | e-ISSN: | 1862-6319 | DOI: | 10.1002/pssa.201026396 | ISI #: | WOS:000287295100020 | Rights: | 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | Category: | A1 | Type: | Journal Contribution |
| Appears in Collections: | Research publications |
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| pssa.201026396.pdf Restricted Access | Published version | 578.27 kB | Adobe PDF | View/Open Request a copy |
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