Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates

Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31615

Title:	Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates
Authors:	Molle, Alessandro BRAMMERTZ, Guy Lamagna, Luca Fanciulli, Marco MEURIS, Marc Spiga, Sabina
Issue Date:	2009
Publisher:	AMER INST PHYSICS
Source:	Applied physics letters, 95 (2) (Art N° 023507)
Abstract:	La-doped ZrO2 thin films were grown by O-3-based atomic layer deposition on III-V (GaAs,In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures.
Notes:	Molle, A (corresponding author), INFM, CNR, Lab Nazl MDM, Via C Olivetti 2, I-20041 Agrate Brianza Milano, Italy. alessandro.molle@mdm.infm.it
Keywords:	atomic layer deposition;bonds (chemical);elemental semiconductors;germanium;lanthanum;passivation;semiconductor-insulator boundaries;surface composition;thin films;X-ray photoelectron spectra;zirconium compounds;OXIDATION
Document URI:	http://hdl.handle.net/1942/31615
ISSN:	0003-6951
e-ISSN:	1077-3118
DOI:	10.1063/1.3182734
ISI #:	WOS:000268089200109
Rights:	2009 American Institute of Physics.
Category:	A1
Type:	Journal Contribution
Appears in Collections:	Research publications

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