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http://hdl.handle.net/1942/31615| Title: | Ge-based interface passivation for atomic layer deposited La-doped ZrO2 on III-V compound (GaAs,In0.15Ga0.85As) substrates | Authors: | Molle, Alessandro BRAMMERTZ, Guy Lamagna, Luca Fanciulli, Marco MEURIS, Marc Spiga, Sabina |
Issue Date: | 2009 | Publisher: | AMER INST PHYSICS | Source: | Applied physics letters, 95 (2) (Art N° 023507) | Abstract: | La-doped ZrO2 thin films were grown by O-3-based atomic layer deposition on III-V (GaAs,In0.15Ga0.85As) substrates through direct growth and after intercalation of a Ge interface passivation layer. The interface composition was investigated by x-ray photoelectron spectroscopy, revealing a dramatic reduction of semiconductor-oxygen bonding upon Ge passivation. An improved electrical quality of the Ge-passivated interfaces due to the removal of Ga3+ bonding related traps is demonstrated by conductance measurements at various temperatures. | Notes: | Molle, A (corresponding author), INFM, CNR, Lab Nazl MDM, Via C Olivetti 2, I-20041 Agrate Brianza Milano, Italy. alessandro.molle@mdm.infm.it |
Keywords: | atomic layer deposition;bonds (chemical);elemental semiconductors;germanium;lanthanum;passivation;semiconductor-insulator boundaries;surface composition;thin films;X-ray photoelectron spectra;zirconium compounds;OXIDATION | Document URI: | http://hdl.handle.net/1942/31615 | ISSN: | 0003-6951 | e-ISSN: | 1077-3118 | DOI: | 10.1063/1.3182734 | ISI #: | WOS:000268089200109 | Rights: | 2009 American Institute of Physics. | Category: | A1 | Type: | Journal Contribution |
| Appears in Collections: | Research publications |
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