Please use this identifier to cite or link to this item: http://hdl.handle.net/1942/31630
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dc.contributor.authorLin, Han-Chung-
dc.contributor.authorWang, Wei-E.-
dc.contributor.authorBRAMMERTZ, Guy-
dc.contributor.authorMEURIS, Marc-
dc.contributor.authorHeyns, Marc-
dc.date.accessioned2020-08-10T12:43:47Z-
dc.date.available2020-08-10T12:43:47Z-
dc.date.issued2009-
dc.date.submitted2020-08-06T08:12:22Z-
dc.identifier.citationMicroelectronic engineering, 86 (7-9) , p. 1554 -1557-
dc.identifier.urihttp://hdl.handle.net/1942/31630-
dc.description.abstractIn this paper we compare the interface trap distributions D-it(E) of sulfur treated Al2O3/In0.53Ga0.47As interfaces, which underwent MOS capacitor and transistor fabrication processes. Lower interface trap densities were found close to the conduction band edge for both cases. The inversion channel MOSFET achieves high device performance despite the fact that its oxide-semiconductor interface quality is a notch below that of the MOS capacitor with optimized process. (C) 2009 Elsevier B.V. All rights reserved.-
dc.language.isoen-
dc.publisherELSEVIER SCIENCE BV-
dc.rights2009 Elsevier B.V. All rights reserved-
dc.subject.otherInversion channel-
dc.subject.otherIII-V-
dc.subject.otherMOSFET-
dc.subject.otherInGaAs on InP-
dc.subject.otherALD-
dc.subject.otherSulfur treatment-
dc.titleElectrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator-
dc.typeJournal Contribution-
local.bibliographicCitation.conferencedateJUN 28-JUL 07, 2009-
local.bibliographicCitation.conferencename16th Biennial Conference on Insulating Films on Semiconductors-
local.bibliographicCitation.conferenceplaceCambridge Univ, Clare Coll, Cambridge, ENGLAND-
dc.identifier.epage1557-
dc.identifier.issue7-9-
dc.identifier.spage1554-
dc.identifier.volume86-
local.bibliographicCitation.jcatA1-
dc.description.notesLin, HC (corresponding author), IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.-
dc.description.notesdlin@imec.be-
local.publisher.placePO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS-
local.type.refereedRefereed-
local.type.specifiedArticle-
dc.identifier.doi10.1016/j.mee.2009.03.112-
dc.identifier.isiWOS:000267460100008-
dc.contributor.orcidheyns, marc/0000-0002-1199-4341; Brammertz, Guy/0000-0003-1404-7339-
dc.identifier.eissn-
local.provider.typewosris-
local.uhasselt.uhpubno-
local.description.affiliation[Lin, Han-Chung; Brammertz, Guy; Meuris, Marc; Heyns, Marc] IMEC, B-3001 Leuven, Belgium.-
local.description.affiliation[Wang, Wei-E.] Intel Corp, Santa Clara, CA 95052 USA.-
item.fulltextWith Fulltext-
item.contributorLin, Han-Chung-
item.contributorWang, Wei-E.-
item.contributorBRAMMERTZ, Guy-
item.contributorMEURIS, Marc-
item.contributorHeyns, Marc-
item.fullcitationLin, Han-Chung; Wang, Wei-E.; BRAMMERTZ, Guy; MEURIS, Marc & Heyns, Marc (2009) Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator. In: Microelectronic engineering, 86 (7-9) , p. 1554 -1557.-
item.accessRightsRestricted Access-
crisitem.journal.issn0167-9317-
crisitem.journal.eissn1873-5568-
Appears in Collections:Research publications
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